ChipFind - документация

Электронный компонент: NTE7067

Скачать:  PDF   ZIP
NTE30001
Infrared Emitting Diode
BiDirectional
Features:
D
BiDirectional Light Emission Type
D
High Output:
F
e
= 1mW Typ at I
F
= 20mA
Applications:
D
Light Source for Tape End Detector for VHS type VCR's
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Power Dissipation, P
D
75mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Current (Note 1), I
FM
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
opr
25
C to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
C to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, Note 2), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
100
s, Duty Ratio = 0.01
Note 2. For 3 seconds at a distance of 2.5mm from the bottom face of the resin package.
ElectroOptical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F
= 20mA
1.2
1.4
V
Peak Forward Voltage
V
FM
I
FM
= 500mA
3.0
4.0
V
Reverse Current
I
R
V
R
= 3V
10
A
Terminal Capacitance
C
t
V = 0, f = 1MHz
50
100
pF
Radiant Flux
F
e
I
F
= 20mA
0.7
1.0
2.0
mW
Peak Emission Wavelength
p
I
F
= 5mA
950
nm
Half Intensity Wavelength
I
F
= 5mA
45
nm
.236
(6.0)
A
K
.100 (2.54)
.157
(4.0)
.157
(4.0)
.669
(17.0)
.039
(1.0)
.708
(18.0)
.019
(0.5)
.019
(0.5)
.070 (1.78)
.049 (1.25) R
(2 Places)
A
K