NTE2308
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D
High Breakdown Voltage
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
C), P
C
2.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pules test: Pulse Width
300
s, Duty Cycle
10%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 400V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1.6A
15
V
CE
= 5V, I
C
= 8A
8
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 1.6A
20
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 1.6A
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 8A, I
B
= 1.6A
1.5
V
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
160
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
500
V
CollectorEmitter Breakdown Voltage
V
(BR)CBO
I
C
= 10mA, R
BE
=
400
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 12A, I
B
= 2.4A, L = 50
H
400
V
V
CEX(sus)
I
C
= 12A, I
B1
= 2.4A, L= 200
H,
I
B2
= 2.4A, Clamped
400
V
I
C
= 3A, I
B1
= 0.6A, L= 200
H,
I
B2
= 0.6A, Clamped
450
V
TurnOn Time
t
on
V
CC
= 200V, I
C
= 10A, I
B1
= 2A,
1.0
s
Storage Time
t
stg
I
B2
= 2A, R
L
= 20
2.5
s
Fall Time
t
f
1.0
s
.615 (15.62)
.190 (4.82)
.126
(3.22)
Dia
.215 (5.47)
B
C
E
.787
(20.0)
.787
(20.0)
.591
(15.02)
C
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