NTE308
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings:
Repetitive Peak Forward OffState and Reverse Voltage, V
DRM
, V
RRM
800V
. . . . . . . . . . . . . . . . . . .
RMS OnState Current, I
TRMSM
, I
FRMSM
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mean OnState Current (T
C
= +80
C), I
TAVM
, I
FAVM
Thyristor
3.4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode
3.45A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak OnState Current, I
TRM
, I
FRM
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Current (t = 10ms, t
vi
= +100
C), I
TSM
, I
FSM
Thyristor
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode
60A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Rate of Rise of OnState Current, di/dt
crit
500A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Rate of Rise of OnState Current (I
TM
= 20A, t
vi
= +100
C, V
DM
= 640V), di/dt
crit
(Pulse Generator Data: v
L
= 8V, i
K
= 0.25A, di
G
/dt
0.25A/
s)
f
o
= 50Hz
300A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
o
= 16kHz
100A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Rise of OffState Voltage (t
vi
= +100
C, V
D
= 536V), dv/dt
crit
400V/
s
. . . . . . . . . . . . . . . . . .
Rate of Rise of Voltage Subsequent to Prior OnState Current, dv/dt
crit
t
vi
= +100
C, V
D
= 536V
1000V/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power Losses (t
g
10
s), P
GM
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Mean Gate Power Loss for One Cycle, P
G
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +130
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
Without Heatsink
35
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface
10
C/W
. .
Electrical Characteristics:
Maximum OnState Voltage (t
vi
= +25
C, i
T
= i
F
= 10A), V
T
, V
F
Thyristor
2.16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode
2.2V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Threshold Voltage, V
(TO)
Thyristor
1.6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode
1.4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Slope Resistance, r
T
, r
F
Thyristor
53
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode
70
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont'd):
Maximum Gate Trigger Voltage (t
vi
= +25
C, V
D
= 6V, R
A
= 20
), V
GT
2.0V
. . . . . . . . . . . . . . . . . . .
Minimum Gate Trigger Voltage (t
vi
= +100
C, V
D
= 6V, R
A
= 20
), V
GT
0.1V
. . . . . . . . . . . . . . . . . . .
Maximum Gate Trigger Current (t
vi
= +25
C, V
D
= 6V, R
A
= 20
), I
GT
50mA
. . . . . . . . . . . . . . . . . . .
Maximum Holding Current (t
vi
= +25
C, V
D
= 6V, R
A
= 20
), I
H
100mA
. . . . . . . . . . . . . . . . . . . . . . . .
Maximum Latching Current (t
vi
= +25
C, V
D
= 6V, R
GK
20
), I
L
210mA
. . . . . . . . . . . . . . . . . . . . . .
(Pulse Generator Data: i
G
= 0.25A, di
G
/dt = 0.25A/
s, t
g
= 4
s)
Typical Capacitance, AnodeCathode at Zero Voltage (t
vi
= +25
C, f
o
= 16kHz), C
zero
250pF
. . . . .
Maximum Lag Charge (t
vi
= +100
C, i
FM
= 10A, di
F
/dt = 10A/
s), Q
S
0.96
As
. . . . . . . . . . . . . . . . .
Maximum Forward OffState and Reverse Current (t
vi
= +100
C, v
D
= 800V), i
D
, i
R
1.5mA
. . . . . . .
Maximum Gate Controlled Delay Time (t
vi
= +25
C, V
D
= 536V, i
TM
= 5A), t
gd
0.8
s
. . . . . . . . . . . .
(Pulse Generator Data: i
G
= 0.25A, di
G
/dt = 0.5A/
s)
Maximum Pulse TurnOff Time (t
vi
= +100
C), t
qp
5.1
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Pulse TurnOff Time (t
vi
= +80
C, f
o
= 16kHz), t
qp
3.8
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Time (t
vi
= +25
C, i
FM
= 10A, di
F
/dt = 10A/
s), t
rr
0.7
s
. . . . . . . . . .
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Gate
.580 (14.7)
.200
(5.08)
Cathode
Anode/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
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