NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
CollectorBase Voltage (I
E
= 0), V
CBO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
120V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
tot
T
C
= +25
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
17.4
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
175
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 120V, I
E
= 0
1
A
I
CEO
V
CE
= 80V, I
B
= 0
10
A
I
CEV
V
CE
= 120V, V
BE
= 1.5V
1
A
V
CE
= 120V, V
BE
= 1.5V, T
C
= +150
C
1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1
A
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 10mA, I
B
= 0, Note 1
120
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 250mA, I
B
= 25mA, Note 1
0.6
V
I
C
= 500mA, I
B
= 50mA, Note 1
1.0
V
I
C
= 1A, I
B
= 200mA, Note 1
2.0
V
Note 1. Pulse Duration = 300
s, Duty Cycle
2%.
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