NTE7139
Integrated Circuit
Video Output Amplifier
Description:
The NTE7139 is a monolithic video output amplifier with a 6MHz bandwidth in a 9Lead Staggered
SIP type medium power package. This device uses highvoltage DMOS technology and is intended
to drive the cathode of a CRT. To obtain maximum performance, the amplifier should be used with
black current control.
Features:
D
No External Heatsink Required
D
Black Current Measurement Output for Automatice Black Current Stabilization (ABS)
D
Internal 2.5V Reference Circuit
D
Internal Protection Against Positive Apperaing CRT Flashover Discharges
D
Single Supply Voltage of 200V
D
Simple Application with a Variety of Color Decoders
D
Controlled SwitchOff Behaviour
Absolute Maximum Ratings: (Voltages referenced to GND (Pin4) unbless otherwise specified)
Supply Voltage, V
DD
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inverting Input Voltage, V
in
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Black Current Measurement Output Voltage, V
om
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cathode DC Output Voltage, V
ov
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Feedback Output Voltage, V
of
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low NonRepetitive Peak Cathode Output Current, I
oc(l)
(Flashover Discharge = 100
C, Note 2)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High NonRepetitive Peak Cathode Output Current, I
oc(h)
(Flashover Discharge = 100
C, Note 3)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
max
tbf W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperatrure Range, T
J
20
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge, V
esd
Note 4
2000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 5
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (In Free Air, Note 6), R
thJA
56K/W
. . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (Note 6), R
thJC
12K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Inputs and output are protected against electrostatic discharge in normal handling. However,
to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices.
Note 2. The cathode output is protected against peak currents (caused by positive voltage peaks
during highresistance flash) of 5mA maximum with a charge content of 100
C.
Note 3. The cathode output is also protected against peak currents (caused by positive voltage
peaks during lowresistance flash) of 10mA maximum with a charge content of 100
C.
Note 4. Human body model: equivalent to discharging a 100pF capacitor through a 1.5k
resistor.
Note 5. Machine model: equivalent to discharging a 200pF capacitor through a 0
resistor.
Note 6. External heatsink not required.
Recommended Operation Conditions:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
V
DD
Note 7
180
210
V
Black Current Measurement Output Voltage
V
om
1.4
6.0
V
Operating Ambient Temperature Range
T
A
20
+65
C
Note 7. The rating of supply voltage is 250V, but because of flash the maximum operating range for
supply voltage is 210V.
Electrical Characteristics: (V
DD
= 200V, V
om
= 4V, T
A
= +25
C, C
L
= 10pF (C
L
consists of parasitic
and cathode capacitance) unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Quiescent Voltage Supply Current
I
DD
V
ocDC
= 100V
2.8
3.0
3.3
mA
Input Bias Current (Pin3)
I
bias
V
ocDC
= 100V
0
20
A
Internal Reference Voltage Input Stage
V
int
V
ocDC
= 100V
2.5
V
Offset Current of Black Current
Measurement Output
I
om(os)
I
oc
= 0
A, V
in
= 1.5 to 3.5V,
V
om
= 1.4 to 6V
10
+10
A
Temperature Drift of Internal
Reference Voltage Input Stage
V
Tint
V
ocDC
= 100V
0.5
mV/K
Linearity of Current Transfer
I
om
I
oc
I
oc
= 10
A to 3mA,
V
in
= 1.5 to 3.5V,
V
om
= 1.4 to 6V
0.9
1.0
1.1
Maximum Peak Output Current (Pin9)
I
of(max)
V
oc
= 20V to V
DD
30V
25
mA
Minimum Output Voltage (Pin8)
V
oc(min)
V
in
= 3.5V
7
12
V
Maximum Output Voltage (Pin8)
V
oc(max)
V
in
= 1.5V
V
DD
14
V
DD
10
V
Gain Bandwidth Product of
OpenLoop Gain V
os
/V
i, dm
GB
f = 500kHz, V
ocDC
= 100V
0.52
GHz
Small Signal Bandwidth
BW
S
V
ocAC
= 60V
(pp
),
5.0
6.0
MHz
Large Signal Bandwidth
BW
L
V
ocDC
= 100V
4.7
5.7
MHz
Cathode Output Propagation Delay
Time 50% Input to 50% Output
t
pd
V
oc
= 50 to 150V Square Wave,
f < 1MHz, t
rin
= t
fin
= 40ns
38
49
60
ns
Cathode Output Rise Time
10% Output to 90% Output
t
r
V
oc
= 50 to 150V Square Wave,
f < 1MHz, t
fin
= 40ns
62
74
87
ns
Cathode Output Fall Time
90% Output to 10% Output
t
f
V
oc
= 150 to 10V Square Wave,
f < 1MHz, t
rin
= 40ns
62
74
87
ns
Setting Time 50% Input to
(99% < Output < 101%)
t
s
V
oc
= 50 to 150V Square Wave,
f < 1MHz, t
rin
= t
fin
= 40ns
350
ns
Slew Rate Between 50 and 150V
SR
V
in
= 2V
(pp
) Square Wave,
f < 1MHz, t
rin
= t
fin
= 40ns
1200
V/
s
Cathode Output Voltage Overshoot
O
V
V
oc
= 50 to 150V Square Wave,
f < 1MHz, t
rin
= t
fin
= 40ns
1
%
Power Supply Rejection Ratio
SRR
f < 50kHz, Note 8
60
dB
Note 8. PSSR: The ratio of the change in supply voltage to the change in input voltage when there
is no change in output voltage.
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