NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D
Fast Switching: t
r
, t
f
= 300ns (Max)
D
Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
110V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
T
A
= +25
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3.33
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A
110
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, Note 1
80
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A
8
V
CollectorEmitter Cutoff Current
I
CEO
V
CE
= 60V
100
A
I
CEX
V
CE
= 110V, V
EB
= 500mV
10
A
CollectorBase Cutoff Current
I
CBO
V
CB
= 80V
0.4
A
EmitterBase Cutoff Current
I
EBO
V
EB
= 6V
0.4
A
Note 1. Pulse Width = 300
s, Duty Cycle
2%.
PDF 
ZIP