NTE77
Silicon NPN Transistor
Broadband CATV Driver
Description:
The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear
amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for
use in CATV driver stages in trunk line, bridger, and line extender amplifiers.
Features:
D
High GainBandwidth Product: f
T
= 1.5GHz Typ
D
Low Intermodulation, Low CrossModulation Distortion: XMOD = 57dB
D
Low Noise Figure: NF = 2.7dB Typ
D
Low Output Capacitance: C
ob
= 3.5pF Max @ V
CB
= 30V
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
tot
3.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
+50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, I
B
= 0, Note 1
30
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0, Note 1
50
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
5
V
Collector Cutoff Current
I
CEO
V
CE
=, 28V, I
B
= 0
0.1
mA
Note 1. Pulsed through 25mH Inductor.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 15V, I
C
= 50mA
30
300
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 15V, I
C
= 50mA,
f = 200MHz
1500 1800
MHz
Collector Output Capacitance
C
ob
V
CB
= 30V, I
E
= 0, f = 1MHz
2.5
3.5
pF
Collector Input Capacitance
C
ib
V
EB
= 0.5V, I
C
= 0, f = 1MHz
8.0
10
pF
Functional Test
Noise Figure
Narrow Band
NF
NB
V
CE
= 10V, I
C
= 10mA,
f = 200MHz
2.7
dB
Broad Band
NF
BB
V
CE
= 15V, I
C
= 50mA,
f = 216MHz
7.0
8.0
dB
Power Gain at Optimum Noise Figure
G
VE
V
CE
= 15V, I
C
= 50mA,
f = 260MHz
6.8
7.2
dB
CrossModulation
XMOD
V
CE
= 15V, I
C
= 50mA,
P
O
= +45dBmV, Note 2
60
57
dB
Second Order Distortion
2
nd
O
V
CE
= 15V, I
C
= 50mA,
P
O
= +45dBmV, Note 3
60
57
dB
Note 2. 12 Channel Flat NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW
Note 3. Channel 2 and Channel G Intermod Product on Channel 13
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
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