NTE81
Silicon NPN Transistor
Dual Differential Amp, General Purpose Switch
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
One Die
575mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
One Die
3.29mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
3.57mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
One Die
1.8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
2.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
One Die
10.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
14.3mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
JC
One Die
97
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
70
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 1), R
thJA
One Die
304
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All Die Equal Power
280
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors
Q1 Q2
JunctiontoAmbient
57%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JunctiontoCase
0%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1 Q3 or Q1 Q4
JunctiontoAmbient
55%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JunctiontoCase
0%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 2
30
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
60
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Collector Cutoff Current
I
CEV
V
CE
= 50V, V
BE(off)
= 3V
15
nA
Base Cutoff Current
I
BL
V
CE
= 50V, V
EB(off)
= 3V
30
nA
ON Characteristics (Note 2)
DC Current Gain
h
FE
I
C
= 0.1mA, V
CE
= 10V
20
50
I
C
= 1.0mA, V
CE
= 10V
25
55
I
C
= 10mA, V
CE
= 10V
35
65
I
C
= 150mA, V
CE
= 1.0V
20
65
I
C
= 150mA, V
CE
= 10V
40
30
120
I
C
= 300mA, V
CE
= 10V
25
75
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.2
0.4
V
I
C
= 300mA, I
B
= 30mA
0.35
1.2
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
0.6
0.95
1.3
V
I
C
= 300mA, I
B
= 30mA
2.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 20mA, V
CE
= 20V,
f = 100MHz
200
250
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz
3.5
8.0
pF
Input Capacitance
C
ibo
V
EB
= 0.5V, I
C
= 0, f = 100kHz
15
20
pF
Switching Characteristics
Delay Time
t
d
V
CC
= 30V, I
C
= 150mA,
15
s
Rise Time
t
r
V
BE(off)
= 0.5V, I
B1
= 15mA
30
s
Storage Time
t
s
V
CC
= 30V, I
C
= 150mA,
250
s
Fall Time
t
f
I
B1
= I
B2
= 15mA
60
s
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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