NTE859/NTE859SM
Integrated Circuit
Quad, Low Noise, JFET Input
Operational Amplifier
Description:
The NTE859 (14Lead DIP) and NTE859SM (SOIC14 Surface Mount) JFETinput operational am-
plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low
harmonic distortion and low noise make these devices ideally suited as amplifiers for highfidelity and
audio preamplifier applications. Each amplifier features JFETinputs (for high input impedance)
coupled with bipolar output stages all integrated on a single monolithic chip.
Features:
D
Low Power Consumption
D
Wide CommonMode and Differential Voltage Ranges
D
Low Input Bias and Offset Currents
D
Output ShortCircuit Protection
D
Low Total Harmonic Distortion: 0.003% Typ
D
Low Noise: Vn = 18nV
H
Z
Typ
D
High Input Impedance: JFETInput Stage
D
Internal Frequency Compensation
D
LatchUp Free Operation
D
High Slew Rate: 13V/
s Typ
Absolute Maximum Ratings: (T
A
= 0 to +70
C unless otherwise specified)
Supply Voltage (Note 1), V
CC
(+)
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage (Note1), V
CC
()
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage (Note 2), V
ID
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Range (Note 1, Note 3),V
IDR
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of Output Short Circuit (Note 4),t
S
Unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
A
= +25
C), P
D
680mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
10mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from Case for 10sec), T
L
+260
C
. . . . . . . . . . . . . . . . . .
Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between
V
CC
(+) and V
CC
().
Note 2. Differential voltages are at the noninverting input pin with respect to the inverting pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whichever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
Electrical Characteristics: (V
CC
=
15V, T
A
= 0 to+70
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
V
O
= 0, R
S
= 50
T
A
= +25
C
3
10
mV
13
mV
Temperature Coefficient of Input Offset
Voltage
V
IO
V
O
= 0, R
S
= 50
10
V/
C
Input Offset Current
I
IO
V
O
= 0, Note 6
T
A
= +25
C
5
100
pA
2
nA
Input Bias Current
I
IB
V
O
= 0, Note 6
T
A
= +25
C
30
200
pA
7
nA
CommonMode Input Voltage Range
V
ICR
T
A
= +25
C
11
12
V
Maximum Peak Output Voltage Range
V
OM
R
L
= 10k
, T
A
= +25
C
12
13.5
V
R
L
=
10k
12
V
R
L
=
2k
10
12
V
LargeSignal Differential Voltage
A
VD
V
O
=
10V,
T
A
= +25
C
25
200
V/mV
Amplification
R
L
2k
15
V/mV
UnityGain Bandwidth
B
1
T
A
= +25
C
3
MHz
Input Resistance
r
i
T
A
= +25
C
10
12
CommonMode Rejection Ratio
CMRR
V
IC
= V
ICR
min, V
O
= 0, R
S
= 50
,
T
A
= +25
C
70
86
dB
SupplyVoltage Rejection Ratio
(
V
CC
/
V
IO
)
k
SVR
V
CC
=
15V to
9V, V
O
= 0,
R
S
= 50
, T
A
= +25
C
70
86
dB
Supply Current (Per Amplifier)
I
CC
No Load, V
O
= 0, T
A
= +25
C
1.4
2.5
mA
Crosstalk Attenuation
V
o1
/V
o2
A
VD
= 100, T
A
= +25
C
120
dB
Note 5. All characteristics are measured under openloop conditions with zero commonmode volt-
age unless otherwise specified.
Note 6. Input bias currents of a FETinput operational amplifier are normal junction reverse currents,
which are temperature sensitive. Pulse techniques must be used that will maintain the junc-
tion temperatures as close to the ambient temperature as is possible.
Operating Characteristics: (V
CC
=
15V, T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Slew Rate at Unity Gain
SR
V
I
= 10V, R
L
= 2k
, C
L
= 100pF
8
13
V/
s
Rise Time Overshoot Factor
t
r
V
I
= 10V, R
L
= 2k
, C
L
= 100pF
0.1
s
I
L
L
10
%
Equivalent Input Noise Voltage
V
n
R
S
= 100
f = 1kHz
18
nV/
Hz
f = 10Hz to 10kHz
4
V
Equivalent Input Noise Current
I
n
R
S
= 100
, f = 1kHz
0.01
pA/
Hz
Total Harmonic Distortion
THD
V
O(rms)
= 10V, R
S
1k
, R
L
2k
, f = 1kHz
0.003
%
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