NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (FR5 Board, Note 1), P
D
225mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
C
1.8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (FR5 Board, Note 1), R
thJA
556
C/W
. . . . . . . . . . . . . .
Total Device Dissipation (Alumina Substrate, Note 2), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
C
2.4mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Alumina Substrate, Note 2), R
thJA
417
C/W
. . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
60
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 3
60
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0
0.01
A
V
CB
= 50V, I
E
= 0, T
A
= +125
C
10
A
I
CEX
V
CE
= 30V, V
EB(off)
= 0.5V
50
nA
Base Current
I
B
V
CE
= 30V, V
EB(off)
= 0.5V
50
nA
Note 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 3)
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 0.1mA
35
V
CE
= 10V, I
C
= 1mA
50
V
CE
= 10V, I
C
= 10mA
100
V
CE
= 10V, I
C
= 150mA
100
300
V
CE
= 10V, I
C
= 500mA
50
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA
0.4
V
I
C
= 500mA, I
B
= 50mA
1.6
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA
1.3
V
I
C
= 500mA, I
B
= 50mA
2.6
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 50mA, V
CE
= 20V,
f = 100MHz, Note 3
300
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 1MHz
8
pF
Input Capacitance
C
ibo
V
EB
= 2V, I
C
= 0, f = 1MHz
30
pF
Switching Characteristics
TurnOn Time
t
on
V
CC
= 30V, I
C
= 150mA,
45
ns
Delay Time
t
d
I
B1
= 15mA
10
ns
Rise Time
t
r
40
ns
TurnOn Time
t
off
V
CC
= 6V, I
C
= 150mA,
100
ns
Delay Time
t
s
I
B1
= I
B2
= 15mA
80
ns
Rise Time
t
f
30
ns
Note 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E
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