NTE916
Integrated Circuit
High Current, NPN Transistor Array,
Common Emitter
Description:
The NTE916 is a high current transistor array in a 16Lead DIP type package consisting of seven
silicon NPN transistors on a common monolithic substrate connected in a commonemitter config-
uration designed for directly driving sevensegment displays and lightemitting diodes (LED) dis-
plays. This device is also well suited for a variety of other drive applications including relay control
and thyristor firing.
Features:
D
Seven Transistors Permit a Wide Range of Applications
D
High Collector Current: I
C
= 100mA Max
D
Low CollectorEmitter Saturation Voltage: V
CE(sat)
= 400mV Typ @ 50mA
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Power Dissipation (Total Package), P
D
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Per Transistor
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 55
C
6.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec max), T
L
+265
C
. . . . . . . . . . . . . . . . .
The Following Ratings Apply for Each Transistor in the Device
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorSubstrate Voltage (Note 1), V
CIO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative that any collec-
tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CES
I
C
= 500
A, I
E
= 0
20
60
V
CollectorSubstrate Breakdown Voltage
V
(BR)CIO
I
CI
= 500
A, I
E
= 0, I
B
= 0
20
60
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
16
24
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
C
= 500
A
5.0
6.9
V
DC Forward Current Transfer Ratio
h
FE
V
CE
= 500mV, I
C
= 30mA
30
68
V
CE
= 800mV, I
C
= 50mA
40
70
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 30mA, I
B
= 1mA
0.87
1.0
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 30mA, I
B
= 1mA
0.27
0.5
V
I
C
= 50mA, I
B
= 5mA
0.4
0.7
V
Collector Cutoff Current
I
CEO
V
CE
= 10V, I
B
= 0
10
A
I
CBO
V
CB
= 10V, I
E
= 0
1
A
Pin Connection Diagram
Base Q
6
Base Q
4
Base Q
3
Collector Q
6
Collector Q
4
Collector Q
3
Base Q
1
Collector Q
7
Collector Q
5
Base Q
7
Base Q
5
Base Q
2
Collector Q
2
Collector Q
1
1
2
3
4
5
Substrate
6
7
8
16
15
14
13
Common Emitter
12
11
10
9
.260 (6.6) Max
16
9
1
8
.785 (19.9)
Max
.200 (5.08)
Max
.245
(6.22)
Min
.300
(7.62)
.700 (17.7)
.100 (2.54)
PDF 
ZIP