NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D
High DC Current Gain:
h
FE
= 25,000 (Min) @ I
C
= 200mA
= 15,000 (Min) @ I
C
= 500mA
D
CollectorEmitter Breakdown Voltage:
V
(BR)CES
= 40V @ I
C
= 500mA
D
Low CollectorEmitter Saturation Voltage:
V
CE(sat)
= 1.5V @ I
C
= 1A
D
Monolithic Construction for High Reliability
Absolute Maximum Ratings:
CollectorEmitter Voltage (Note 2), V
CEO
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
D
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
80mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55 to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55 to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
12.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V
(BR)CES
is tested in lieu of V
(BR)CEO
in order to avoid errors caused
by noise pickup. The voltage measured during the V
(BR)CES
test is the V
(BR)CEO
of the output
transistor.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CES
I
C
= 100
A, V
BE
= 0
40
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
50
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
12
V
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 10V, I
C
= 0
100
nA
ON Characteristics (Note 3)
DC Current Gain
|h
fe
|
I
C
= 200mA, V
CE
= 5V
25,000
65,000
150,000
I
C
= 500mA, V
CE
= 5V
15,000
35,000
I
C
= 1A, V
CE
= 5V
4,000
12,000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 2mA
1.2
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 2mA
1.85
2.0
V
BaseEmitter ON Voltage
V
BE(ON)
I
C
= 1A, V
CE
= 5V
1.7
2.0
V
Dynamic Characteristics
SmallSignal Current Gain
h
FE
I
C
= 200mA, V
CE
= 5V,
f = 100MHz, Note 2
1.0
3.2
CollectorBase Capacitance
C
cb
V
CB
= 10V, I
E
= 0, f = 1MHz
2.5
6.0
pF
Note 3. Pulse test: Pulse Width
300
s, Duty Cycle
2.0%.
B
C
E
B
C
E
NTE272 Schematic
NTE273 Schematic
Uniwatt darlington transistors can be used in any
number of low power applications, such as relay
drivers, motor control and as general purpose
amplifiers. As an audio amplifier these devices,
when used as a complementary pair, can drive
3.5 watts into a 3.2ohm speaker using a 14 volt
supply with less than one per cent distortion. Be-
cause of the high gain the base drive requirement
is as low as 1mA in this application. They are also
useful as power drivers for high current applica-
tion such as voltage regulators.
TO202N
Collector Connected to Tab
E B
C
.050 (1.27)
.380 (9.65) Max
.280 (7.25) Max
.128 (3.28) Dia
.200 (5.08)
.100 (2.54)
.218
(5.55)
.160
(4.06)
.475
(12.0)
Min
.995
(25.3)
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