NTE97
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
highspeed, power switching in inductive circuits where falltime is critical. They are particularly
suited for line operated switchmode applications.
Applications:
D
Switching Regulators
D
Inverters
D
Solenoid and Relay Drivers
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEX(sus)
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
5.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
0.86W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +100
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.17
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 250mA, I
B
= 0, V
clamp
= 400V
400
V
V
CEX(sus)
I
C
= 1A, V
clamp
= 450V, T
C
= +100
C
450
V
I
C
= 5A, V
clamp
= 450V, T
C
= +100
C
325
V
Collector Cutoff Current
I
CEV
V
CEV
= 500V, V
BE(off)
= 1.5V
0.25
mA
V
CEV
= 500V, V
BE(off)
= 1.5V, T
C
= +100
C
5.0
mA
I
CER
V
CEV
= 500V, R
BE
= 50
, T
C
= +100
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 8V, I
C
= 0
175
mA
ON Characteristics (Note 3)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2.5A
40
500
V
CE
= 5V, I
C
= 5A
30
300
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 250mA
1.9
V
I
C
= 5A, I
B
= 250mA, T
C
= +100
C
2.0
V
I
C
= 10A, I
B
= 1A
2.9
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 5.2A, I
B
= 250mA
2.5
V
I
C
= 5A, I
B
= 250mA, T
C
= +100
C
2.5
V
Diode Forward Voltage
V
F
I
F
= 5A, Note 3
3
5
V
Dynamic Characteristics
SmallSignal Current Gain
h
fe
V
CE
= 10V, I
C
= 1A, f
test
= 1MHz
10
Output Capacitance
C
ob
V
CB
= 50V, I
E
= 0, f
test
= 100kHz
60
275
pF
Switching Characteristics (Resistive Load)
Delay Time
t
d
V
CC
= 250V, I
C
= 5A, I
B1
= 250mA,
0.05
0.2
s
Rise Time
t
r
V
BE(off)
= 5V, t
p
= 50
s, Duty Cycle
2%
0.25
0.6
s
Storage Time
t
s
1.2
3.0
s
Fall Time
t
f
0.6
1.5
s
Switching Characteristics (Inductive Load, Clamped)
Storage Time
t
sv
I
C
= 5A Peak, V
clamp
= 450V, I
B1
= 250mA,
2.1
5.0
s
Crossover Time
t
c
V
BE(off)
= 5V, T
C
= +100
C
1.3
3.3
s
Storage Time
t
sv
I
C
= 5A Peak, V
clamp
= 450V, I
B1
= 250mA,
0.92
s
Crossover Time
t
c
V
BE(off)
= 5V, T
C
= +25
C
0.5
s
Note 2. Pulse test: Pulse Width = 300
s, Duty Cycle
2%.
Note 3. The internal CollectorEmitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (V
F
) of this diode is
comparable to that of typical fast recovery rectifiers.
PDF 
ZIP