NTE2318
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2318 is a highvoltage, highspeed, switching NPN transistor with an internal damper diode
in a TO218 type package. This device is specifically designed for use in large screen color deflection
circuits.
Features:
D
CollectorEmitter Voltage: V
CE
= 1500V
D
CollectorEmitter Sustaining Voltage: V
CEO(sus)
= 700V
D
Switching Time with Inductive Loads: t
f
= 0.5
s (Typ) @ I
C
= 4.5A
D
Internal Flyback Diode
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CES
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 1)
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
C
= 100mA, I
B
= 0
700
V
Collector Cutoff Current
I
CES
V
CE
= 1500V, V
BE
= 0
0.1
mA
V
CE
= 1500V, V
BE
= 0,
T
C
= +125
C
2.0
mA
EmitterBase Leakage Current
I
EBO
V
EB
= 6V, I
C
= 0
300
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 4.5A, V
CE
= 5V
2.25
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4.5A, I
B
= 2A
1
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4.5A, I
B
= 2A
1.3
V
Dynamic Characteristics
CurrentGain Bandwidth Product
f
T
I
C
= 0.1A, V
CE
= 5V, f = 1MHz
7
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
125
pF
Switching Characteristics
Storage Time
t
s
I
C
= 4.5A, I
B
= 1.8A,
8.0
s
Fall Time
t
f
L
B
= 10
H
0.5
s
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
NOTE: Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)
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