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Электронный компонент: NTE99

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NTE99
Silicon NPN Transistor
Darlington
w
/BaseEmitter Speedup Diode
Description:
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for highvoltage,
highspeed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for lineoperated switchmode applications.
Applications:
D
Switching Regulators
D
Motor Controls
D
Inverters
D
Solenoid and Relay Drivers
Features:
D
Fast TurnOff Times:
1.0
s (max) Inductive Crossover Time 20 Amps
2.5
s (max) Inductive Storage Time 20 Amps
D
Operating Temperature Range: 65
to +200
C
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
75A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
D
T
C
= +25
C
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.43W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
143W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.7
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case for 5sec), T
L
+275
C
. . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, V
clamp
= 400V
400
V
Collector Cutoff Current
I
CEV
V
CEV
= 600V, V
BE(off)
= 1.5V
0.25
mA
Emitter Cutoff Current
I
EBO
V
BE
= 2V, I
C
= 0
350
mA
ON Characteristics (Note 2)
DC Current Gain
h
FE
I
C
= 20A, V
CE
= 5V
25
I
C
= 40A, V
CE
= 5V
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 20A, I
B
= 1A
2.2
V
I
C
= 50A, I
B
= 10A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 20A, I
B
= 1A
2.75
V
Diode Forward Voltage
V
f
I
F
= 20A, Note 3
2.5
5.0
V
Dynamic Characteristic
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f
test
= 100kHz
750
pF
Switching Characteristics
Resistive Load
Delay Time
t
d
V
CC
= 250V, I
C
= 20A,
0.14
0.3
s
Rise Time
t
r
I
B1
= 1A, V
BE(off)
= 5V,
t = 25
s, Duty Cycle
2%
0.3
1.0
s
Storage Time
t
s
t
p
= 25
s, Duty Cycle
2%
0.8
2.5
s
Fall Time
t
f
0.3
1.0
s
Inductive Load, Clamped
Storage Time
t
sv
I
C
= 20A(pk), V
clamp
= 250V,
1.0
2.5
s
Crossover Time
t
c
I
B1
= 1A, V
BE(off)
= 5V
0.36
1.0
s
Note 2. Pulse Test: Pulse Widtg = 300
s, Duty Cycle
2%.
Note 3. The internal CollectortoEmitter diode can eliminate the need for an external diode to
clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V
f
) of this
diode is comparable to that of typical fast recovery rectifiers.
Circuit Outline
B
C
E
[
50
[
8
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max