NTE477
Silicon NPN Transistor
RF Power Output
Description:
The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF
band mobile radio applications.
Features:
D
High power gain: G
pe
8.2dB @ V
CC
= 13.5V; V
O
= 40W; t = 175MHz
D
Emitter ballasted construction and gold metallization for high reliability, and good performances
D
Low thermal resistance ceramic package with flange
D
Ability of withstanding more than 20:1 load VSWR when operated at V
CC
= 15.2V,
P
O
= 40W, f = 175MHz, T
C
= 25
C
Applications:
30 to 35 watts output power amplifiers in VHF band mobile radio applications.
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
=
), V
CEO
17V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
4.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
33.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
O
= 0
3
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
O
= 10mA, I
E
= 0
35
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
O
= 0.1A, R
BE
=
17
V
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