GTD-18464
Electronic Components
Rev. 0.4 Dec. 2001
KGA4140
Advanced Information
12.5 Gbps Transimpedance Limiting Amplifier IC
DESCRIPTION
Oki s 12.5 Gbps transimpedance amplifier is fabricated 0.1
m gate length P-HEMTs for high-speed optical
communication. The IC has a high overload and a wide band width.
FEATURES
Transimpedance
: 14k
(Differential)
Sensitvity
: <-20dBm
Overload
: >+3dBm
Broadband Amplifier
: >10GHz
Low Noise Current
: <10 pA/
Hz
Group Delay
: <20ps
+3.3V Single Power Supply
+3.3V CML Outputs with 50 Back Terminations
ABSOLUTE MAXIMUM RATINGS
(Ta = 25C)
Parameters
Symbol
Units
Rating
Supply Voltage
V
d
V
0 to
+6
Input Current
I
(IN)
mA
6
Storage Temperature Range
T
ST
C
--40 to 125
RECOMMENDED OPERATING CONDITIONS
(Ta = 25C)
Parameters
Symbol
Units
Min.
Typ.
Max.
Supply Voltage
V
d
V
+3.14
+3.3
+3.46
GTD-18464
1
Semiconductor
KGA4140
ELECTRICAL CHARACTERISTICS
(Ta= 25C, V
d
= +3.3V, C(diode)+C(stray) = 0.20 pF)
Parameters
Units
Min.
Typ.
Max.
Transimpedance (Differential Output, I
(IN)
<30 A)
14000
Transimpedance (Single Ended Output, I
(IN)
<30 A)
7000
Differential Output Swing (I
(IN)
>30 A)
mVpp
800
Single Ended Output Swing (I
(IN)
>30 A)
mVpp
400
Bandwidth (--3 dB)
GHz
10
Transimpedance Flatness (300 kHz to 6 GHz
)
dB
1
Equivalent Input Noise Current
*1)
pA/
Hz
10
Optical Sensitivity
*2)
dBm
--20
Optical Overload
*2)
dBm
+3
Input Offset Voltage
V
+0.80
Group Delay
ps
20
Output Return Loss (<10 GHz)
dB
10
Power Consumption
W
0.5
Operating Temperature Range
*3)
C
0
+85
*1) Averaged Equivalent Input Noise Current from 130 MHz to 9.0 GHz.
*2) Value of optical sensitivity is guaranteed by design, assuming responsivity of photo diode of 0.90 A/W.
*3) At backside of die.
PAD LAYOUT
(Dimension in mm)
GND1
GND1
GND2
GND3
GND3
Vd1
Vd2
Vd3
GND3
IN
OUT
OUT
Cap1 Cap2
Di Thi k
0 220
0 030
PDF 
ZIP