1/14
KGF1256B/1256
electronic components
This version: Jul. 1998
Previous version: Jan. 1998
GENERAL DESCRIPTION
The KGF1256B is a medium-power amplifier, with frequencies ranging from the UHF-band to
the L-band, that features high output power, low noise, and low current operation. The
KGF1256B specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external
impedance-matching circuits are also required. Because of the low noise and high output power
at the low operating current, the KGF1256B is ideal as a transmitter-driver amplifier for personal
handy phones.
The KGF1256 is similar to the KGF1256B in specifications and typical properties. Although
having S Parameters that are slightly different from those of the KGF1256B, the KGF1256 meets
the specifications for the KGF1256B, even with the same matching circuits.
FEATURES
High output power: 15 dBm (min.)
Low noise: 2.5 dB (max.)
Low current: 40 mA (max.)
Self-bias circuit configuration with built-in source capacitor
Package: 4PSOP
PACKAGE DIMENSIONS
electronic components
KGF1256B/1256
Medium-Power Amplifier
E2Q0024-38-71
Note: Ask our sales department for detailed requirements of the KGF1256.
1.50.15
3.00.2
0.3 MIN
0.6
+0.1
0.05
0.4
+0.1
0.05
1.80.1
0.850.05
1.90.1
2.80.15
0 to 0.15
0.125
+0.03
0
1.10.15
0.36 0.74
(Unit: mm)
Package material
Pin treatment
Solder plate thickness
Lead frame material
Epoxy resin
Solder plating
5 mm or more
42 alloy
3/14
KGF1256B/1256
electronic components
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*1 Self-bias condition: V
DD
= 5
0.25 V, V
G
= 0 V
*2 Self-bias condition: V
DD
= 3 V, V
G
= 0 V
Item
V
DS
Symbol
Condition
Max.
Unit
Drain-source voltage
Gate-source voltage
Total power dissipation
Channel temperature
V
GS
P
tot
T
ch
Ta = 25C
--
7
0.4
300
150
V
V
mW
C
Storage temperature
T
stg
--
125
C
Min.
--
3.0
--
--
45
Ta = 25C
Ta = 25C
Drain current
I
DS
Ta = 25C
360
mA
--
Item
I
GSS
Symbol
Condition
Max.
Unit
Gate-source leakage current
72
--
--
--
mA
dB
--
Min.
--
14.0
--
--
--
(*1), P
IN
=
20 dBm
V
GS
= 3 V
Typ.
--
18.0
13.0
10.5
18.0
Linear gain
G
LIN
(*2), P
IN
=
20 dBm
--
--
12.5
--
--
10.0
--
16.0
18.0
Output power
P
O
(*1), P
IN
=
5 dBm
--
dBm
--
15.5
--
--
11.5
--
--
15.0
(*2), P
IN
=
5 dBm
--
--
13.0
--
--
10.5
f = 850 MHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
(Ta = 25C)
I
GDO
Gate-drain leakage current
360
mA
--
V
GD
= 11 V
--
I
DS(off)
Drain-source leakage current
720
mA
--
V
DS
= 3 V, V
GS
= 2 V
--
I
DSS
Drain current
--
mA
100
V
DS
= 3 V, V
GS
= 0 V
--
I
D
Operating current
40.0
mA
--
(*1), P
IN
= 5 dBm,
f = 850 MHz
--
V
GS(off)
Gate-source cut-off voltage
0.5
V
1.5
V
DS
= 3 V, I
DS
= 720
mA
--
gm
Transconductance
--
mS
100
V
DS
= 3 V, I
DS
= 25 mA
--
F
Noise figure
2.5
dB
--
(*1), f = 850 MHz
--
PDF 
ZIP
