MK32VT864-10YE (98.07.24)
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Semiconductor
MK32VT864-10YE
8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
DESCRIPTION
The Oki MK32VT864-10YE is a fully decoded, 8,388,608 x 64bit synchronous dynamic
random access memory composed of eight 64Mb DRAMs (4Mx16) in TSOP packages
mounted with decoupling capacitors on a 144-pin glass epoxy Small-outline Dual-in-Line
Package supports any application where high density and large capacity of storage
memory are required, like for example Mobile PC or PDAs.
FEATURES
8-Meg Word x 64-bit (2Bank 8Byte) organization
144-pin Small-Outline Dual Inline Memory Module
Single 3.3V power supply, 0.3V tolerance
Input
:LVTTL compatible
Output
:LVTTL compatible
Refresh : 4,096 cycles / 64 ms
Programmable data transfer mode
/CAS latency (2, 3)
Burst length (2, 4, 8)
Data scramble (sequential, interleave)
/CAS before /RAS auto-refresh, Self-refresh capability
Serial Presence Detect (SPD) With EEPROM
PRODUCT ORGANIZATION
Operation
Access Time (Max.)
Product Name
Frequency (Max.)
t
AC2
t
AC3
MK32VT864-10YE
100 MHz
9.0ns
9.0ns
Note. Specification are subject to change without notice.
MK32VT864-10YE (98.07.24)
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BLOCK DIAGRAM
3
4
CLK0
1
2
CLK1
7
8
5
6
/CS0
CKE0
DQMB0
DQMB4
DQ0
DQ7
DQ8
DQ15
DQMB1
UDQM
DQ40
DQ47
DQMB5
DQMB2
DQMB6
DQ0
DQ7
DQ16
DQ23
DQ0
DQ7
DQ48
DQ55
DQMB7
DQ0
DQ7
DQ24
DQ31
DQ0
DQ7
DQ56
DQ63
DQMB3
DQ0
DQ7
LDQM
CKE
/CS
DQ32
DQ39
Vcc
Vss
SDRAMs
0.22uF x8
/RAS,/CAS,/WE
A0-A11,BA0,BA1
1
8
SCL
SDA
A0 A1 A2
Serial PD
1
9
DQ15
DQ8
UDQM
DQ1
DQ8
LDQM
DQ16
DQ9
CKE
/CS
UDQM
DQ1
DQ8
LDQM
CKE
/CS
2
DQ16
DQ9
UDQM
DQ1
DQ8
LDQM
DQ16
DQ9
CKE
/CS
4
3
DQ0
DQ7
DQ0
DQ7
DQ0
DQ7
DQ0
DQ7
UDQM
LDQM
CKE
/CS
LDQM
UDQM
CKE
/CS
8
7
LDQM
DQ0
DQ7
UDQM
CKE
/CS
5
DQ15
DQ8
LDQM
UDQM
CKE
/CS
6
/CS1
CKE1
DQ0
DQ7
DQ15
DQ8
DQ0
DQ7
DQ15
DQ8
DQ0
DQ7
DQ15
DQ8
Note. The Value of all resistors is 10
.
MODULE OUTLINE
(Front)
(Back)
1
2
59
60
61
62
143
144
MK32VT864-10YE (98.07.24)
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PIN CONFIGURATION
Front
Back side
Front side
Back side
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
Pin No.
Pin name
1
Vss
2
Vss
73
N.C
74
CLK1
3
DQ0
4
DQ32
75
Vss
76
Vss
5
DQ1
6
DQ33
77
N.C
78
N.C
7
DQ2
8
DQ34
79
N.C
80
N.C
9
DQ3
10
DQ35
81
Vcc
82
Vcc
11
Vcc
12
Vcc
83
DQ16
84
DQ48
13
DQ4
14
DQ36
85
DQ17
86
DQ49
15
DQ5
16
DQ37
87
DQ18
88
DQ50
17
DQ6
18
DQ38
89
DQ19
90
DQ51
19
DQ7
20
DQ39
91
Vss
92
Vss
21
Vss
22
Vss
93
DQ20
94
DQ52
23
DQMB0
24
DQMB4
95
DQ21
96
DQ53
25
DQMB1
26
DQMB5
97
DQ22
98
DQ54
27
Vcc
28
Vcc
99
DQ23
100
DQ55
29
A0
30
A3
101
Vcc
102
Vcc
31
A1
32
A4
103
A6
104
A7
33
A2
34
A5
105
A8
106
BA0
35
Vss
36
Vss
107
Vss
108
Vss
37
DQ8
38
DQ40
109
A9
110
BA1
39
DQ9
40
DQ41
111
A10
112
A11
41
DQ10
42
DQ42
113
Vcc
114
Vcc
43
DQ11
44
DQ43
115
DQMB2
116
DQMB6
45
Vcc
46
Vcc
117
DQMB3
118
DQMB7
47
DQ12
48
DQ44
119
Vss
120
Vss
49
DQ13
50
DQ45
121
DQ24
122
DQ56
51
DQ14
52
DQ46
123
DQ25
124
DQ57
53
DQ15
54
DQ47
125
DQ26
126
DQ58
55
Vss
56
Vss
127
DQ27
128
DQ59
57
N.C
58
N.C
129
Vcc
130
Vcc
59
N.C
60
N.C
131
DQ28
132
DQ60
61
CLK0
62
CKE0
133
DQ29
134
DQ61
63
Vcc
64
Vcc
135
DQ30
136
DQ62
65
/RAS
66
/CAS
137
DQ31
138
DQ63
67
/WE
68
CKE1
139
Vss
140
Vss
69
/CS0
70
N.C
141
SDA
142
SCL
71
/CS1
72
N.C
143
Vcc
144
Vcc
Pin Name
Function
Pin Name
Function
Vcc
Power Supply (3.3V)
/RAS
Row Address Strobe
Vss
Ground (0V)
/CAS
Column Address Strobe
CLK#
System Clock
/WE
Write Enable
/CS#
Chip Select
DQMB#
Data Input / Output Mask
CKE#
Clock Enable
DQ#
Data Input / Output
A0-A11
Address
SDA
Data I/O for SPD
BA0, BA1
Bank Select Address
SCL
CLK input for SPD
N.C
No Connection
MK32VT864-10YE (98.07.24)
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SERIAL PRESENCE DETECT
Byte
No.
SPD
Hex Value
Remark
Notes
0
80
Defines the number of bytes written into
SPD memory
128 byte
1
08
Total number of bytes of SPD memory
256 byte
2
04
Fundamental memory type
SDRAM
3
0C
Number of rows
12 rows
4
08
Number of columns
8 columns
5
02
Number of module banks
2 bank
6
40
Data width of this assembly
64 bits
7
00
... Data width continuation
0 bits
8
01
Voltage interface level
LVTTL
9
A0
Cycle time (CL=3)
CL=3 t
CC
=10ns
10
90
Access time from CLK (CL=3)
CL=3 t
AC3
=9ns
11
00
DIMM configuration type
Non Parity
12
80
Refresh rate / type
Normal / Self
13
10
Primary SDRAM width
x16
14
00
Error checking SDRAM width
15
01
Minimum CLK delay
t
CCD
: 1 CLK
16
0E
Burst lengths supported
2, 4, 8
17
04
Number of banks on each SDRAM
4 banks
18
06
/CAS latency
2,3
19
01
/CS latency
0
20
01
/WE latency
0
21
00
SDRAM module attributes
22
06
SDRAM device attributes : General
23
F0
Cycle time (CL=2)
CL=2 t
CC2
=15ns
24
90
Access time from CLK (CL=2)
CL=2 t
AC2
=9ns
25
00
Cycle time (CL=1)
Not support
26
00
Access time from CLK (CL=1)
Not support
27
1E
Minimum ROW pulse width
t
RP
=30ns
28
14
/RAS to /RAS bank delay
t
RRD
=20ns
29
1E
/RAS to /CAS delay
t
RCD
=30ns
30
3C
Minimum /RAS precharge time
t
RAS
=60ns
31
10
Density of each bank on module
64MB
32
30
Command and Address Signal Input Setup Time
3ns
33
10
Command and Address Signal Input Hold Time
1ns
34
30
Data Signal Input Setup Time
3ns
35
10
Data Signal Input Hold Time
1ns
36-61
00-00
R.F.U
62
02
SPD data revision code
0.2
63
62
Checksum for byte 0-62
64-71
41,45,20,20,20,20,20,20
Manufacturer's JEDEC ID code
72
01 / 06
Manufacturing location
73-90
4D,4B,33,32,56,54,38,36,34,
2D,31,30,59,45,20,20,20,20
Manufacturer's part number
MK32VT864-10YE
91, 92
20, 20
Revision code
93-125
XX-XX
R.F.U
126
66
Intel specification frequency
66MHz
127
06
Intel specification /CAS latency
CL=2, 3
128-255
FF-FF
Unused storage locations
MK32VT864-10YE (98.07.24)
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ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 to Vcc + 0.5
V
Vcc supply voltage
Vcc, VccQ
-0.5 to 4.6
V
Storage temperature
Tstg
- 55 to 125
C
Power dissipation
P
D*
8
W
Short circuit current
I
OS
50
mA
Operating temperature
Topr
0 to 70
C
*: Ta=25
C
Recommended Operating Conditions
(Voltages referenced to Vss = 0V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Power supply voltage
Vcc, VccQ
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
-
Vcc + 0.3
V
Input low voltage
V
IL
-0.3
-
0.8
V
Capacitance
(Vcc = 3.3V
0.3 V , Ta = 25C f = 1MHz)
Parameter
Symbol
Max.
Unit
Input capacitance(A0-A11, BA0, BA1)
C
IN1
40
pF
Input capacitance(/CS0, /RAS, /CAS, /WE, CKE0, UDQM, LDQM)
C
IN2
40
pF
I/O capacitance(DQ0 - DQ63 )
C
I/O
56
pF
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