1/16
Semiconductor
MSM511664C/CL
DESCRIPTION
The MSM511664C/CL is a 65,536-word 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM511664C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM511664C/CL is available in a 40-pin plastic SOJ or 44/40-pin plastic
TSOP. The MSM511664CL (the low-power version) is specially designed for lower-power applications.
FEATURES
65,536-word 16-bit configuration
Single 5 V power supply,
10% tolerance
Input
: TTL compatible, low input capacitance
Output : TTL compatible, 3-state
Refresh : 256 cycles/4 ms, 256 cycles/32 ms (L-version)
Byte write and fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM511664C/CL-xxJS)
44/40-pin 400 mil plastic TSOP
(TSOPII44/40-P-400-0.80-K) (Product : MSM511664C/CL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Semiconductor
MSM511664C/CL
65,536-Word
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
MSM511664C/CL-70
70 ns
120 ns
495 mW
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
t
RAC
40 ns
t
AA
25 ns
t
CAC
25 ns
t
OEA
Operating (Max.)
MSM511664C/CL-80
80 ns
135 ns
440 mW
45 ns
30 ns
30 ns
5.5 mW/
1.1 mW (L-version)
MSM511664C/CL-60
60 ns
110 ns
550 mW
30 ns
20 ns
20 ns
E2G0014-17-41
This version: Jan. 1998
Previous version: May 1997
2/16
Semiconductor
MSM511664C/CL
PIN CONFIGURATION (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
V
CC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
NC
V
CC
UWE
LWE
RAS
A0
A1
A2
A3
A4
V
CC
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
NC
V
SS
CAS
OE
NC
NC
NC
A7
A6
A5
V
SS
1
V
CC
40-Pin Plastic SOJ
44/40-Pin Plastic TSOP
(K Type)
22
V
CC
2
DQ1
3
DQ2
4
DQ3
5
DQ4
6
DQ5
7
DQ6
8
DQ7
9
DQ8
10
NC
13
V
CC
14
UWE
15
LWE
16
RAS
17
A0
18
A1
19
A2
20
A3
21
A4
44 V
SS
23 V
SS
43 DQ16
42 DQ15
41 DQ14
40 DQ13
39 DQ12
38 DQ11
37 DQ10
36 DQ9
35 NC
32 V
SS
31 CAS
30 OE
29 NC
28 NC
27 NC
26 A7
25 A6
24 A5
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
Pin Name
Function
A0 - A7
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
DQ1 - DQ16
Data Input/Data Output
OE
Output Enable
LWE
Lower Byte Write Enable
V
CC
Power Supply (5 V)
NC
No Connection
UWE
Upper Byte Write Enable
V
SS
Ground (0 V)
3/16
Semiconductor
MSM511664C/CL
BLOCK DIAGRAM
Timing
Generator
RAS
CAS
Timing
Generator
Internal
Address
Counter
Row
Address
Buffers
A0 - A7
V
CC
V
SS
On Chip
V
BB
Generator
Row
De-
coders
Word
Drivers
Memory
Cells
Refresh
Control Clock
Sense
Amplifiers
Column
Decoders
Write
Clock
Generator
I/O
Selector
Output
Buffers
LWE
OE
16
DQ1 - DQ16
16
16
16
16
16
Input
Buffers
16
8
8
8
Column
Address
Buffers
8
UWE
FUNCTION TABLE
Function Mode
RAS
H
L
Input Pin
CAS
*
H
UWE
LWE
H
L
H
OE
L
H
L
L
L
L
L
L
H
H
L
*
*
*
*
*
H
Word Read
Refresh
Standby
Lower Byte Write
DQ Pin
DQ1 - DQ8
High-Z
High-Z
D
IN
DQ9 - DQ16
High-Z
High-Z
D
OUT
Don't Care
D
OUT
Don't Care
D
IN
Upper Byte Write
L
L
L
L
H
D
IN
D
IN
Word Write
H
L
L
H
H
High-Z
High-Z
--
*
*: "H" or "L"
4/16
Semiconductor
MSM511664C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
1.0 to 7.0
50
1
0 to 70
55 to 150
Rating
mA
W
C
C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
--
--
Typ.
Parameter
4.5
0
2.4
1.0
Min.
5.5
0
6.5
0.8
Max.
(Ta = 0C to 70C)
V
Unit
V
V
V
Input Capacitance (A0 - A7)
Input Capacitance
Output Capacitance (DQ1 - DQ16)
C
IN1
Symbol
C
IN2
C
I/O
7
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V 10%, Ta = 25C, f = 1 MHz)
--
--
--
Typ.
(RAS, CAS, UWE, LWE, OE)
5/16
Semiconductor
MSM511664C/CL
DC Characteristics
Parameter
Symbol
Condition
MSM511664
C/CL-70
MSM511664
C/CL-80
MSM511664
C/CL-60
(V
CC
= 5 V 10%, Ta = 0C to 70C)
I
OH
= 2.5 mA
Output High Voltage
I
OL
= 2.1 mA
Output Low Voltage
0 V V
I
6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V V
O
5.5 V
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
t
RC
= 125 ms,
Average Power
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
CAS before RAS,
Supply Current
t
RAS
1 ms
(Battery Backup)
V
CC
0.2 V
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
90
2
1
90
5
90
85
300
200
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
80
2
1
80
5
80
75
300
200
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
100
2
1
100
5
100
95
300
200
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
1, 4,
5
1, 5
RAS cycling,
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
4. V
CC
0.2 V V
IH
6.5 V, 1.0 V V
IL
0.2 V.
5. L-version.
6/16
Semiconductor
MSM511664C/CL
AC Characteristics (1/2)
Parameter
(V
CC
= 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
Fast Page Mode Read Modify Write
Cycle Time
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Access Time from CAS Precharge
CAS to Data Output Buffer Turn-off Delay Time
Transition Time
RAS Precharge Time
RAS Pulse Width
RAS Pulse Width (Fast Page Mode)
RAS Hold Time
CAS Pulse Width
CAS Hold Time
RAS to CAS Delay Time
RAS to Column Address Delay Time
CAS to RAS Precharge Time
Row Address Set-up Time
Row Address Hold Time
Column Address Set-up Time
Column Address Hold Time
Column Address Hold Time from RAS
Column Address to RAS Lead Time
Read Command Set-up Time
Read Command Hold Time
Read Command Hold Time referenced to RAS
Access Time from OE
OE to Data Output Buffer Turn-off Delay Time
Refresh Period
RAS Hold Time referenced to OE
Unit
RAS Hold Time from CAS Precharge
Note
Output Low Impedance Time from CAS
CAS Precharge Time (Fast Page Mode)
Refresh Period (L-version)
Symbol
t
RC
t
RWC
t
PC
t
PRWC
t
RAC
t
CAC
t
AA
t
CPA
t
OFF
t
T
t
RP
t
RAS
t
RASP
t
RSH
t
CAS
t
CSH
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
OEA
t
OEZ
t
REF
t
ROH
t
RHCP
t
CLZ
t
CP
t
AR
t
REF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
4, 5, 6
4, 5
4, 6
4
7
5
6
8
8
4
7
4
3
MSM511664
C/CL-60
Min.
110
155
40
85
--
--
--
--
0
0
3
40
60
60
20
10
20
60
20
15
5
0
10
0
10
45
30
0
0
0
--
0
--
--
15
Max.
--
--
--
--
60
20
30
35
--
20
50
--
10,000
100,000
--
--
10,000
--
40
30
--
--
--
--
--
--
--
--
--
--
20
15
4
32
--
35
--
ns
MSM511664
C/CL-70
MSM511664
C/CL-80
Min.
135
185
55
100
--
--
--
--
0
0
3
45
80
80
30
10
30
80
22
17
5
0
12
0
15
55
45
0
0
0
--
0
--
--
15
Max.
--
--
--
--
80
30
45
50
--
20
50
--
10,000
100,000
--
--
10,000
--
50
35
--
--
--
--
--
--
--
--
--
--
30
15
4
32
--
Min.
120
170
50
95
--
--
--
--
0
0
3
40
70
70
25
10
25
70
20
15
5
0
10
0
10
45
40
0
0
0
--
0
--
--
15
Max.
--
--
--
--
70
25
40
45
--
20
50
--
10,000
100,000
--
--
10,000
--
45
30
--
--
--
--
--
--
--
--
--
--
25
15
4
32
--
50
--
45
--
7/16
Semiconductor
MSM511664C/CL
AC Characteristics (2/2)
Write Command Pulse Width
Write Command to CAS Lead Time
Write Command to RAS Lead Time
Data-in Set-up Time
Data-in Hold Time from RAS
CAS to WE Delay Time
RAS to WE Delay Time
Column Address to WE Delay Time
RAS to CAS Hold Time (CAS before RAS)
CAS Active Delay Time from RAS Precharge
Data-in Hold Time
Write Command Hold Time
Write Command Hold Time from RAS
OE Command Hold Time
OE to Data-in Delay Time
(V
CC
= 5 V 10%, Ta = 0C to 70C) Note 1, 2, 3
Write Command Set-up Time
Parameter
Unit Note
RAS to CAS Set-up Time (CAS before RAS)
CAS Precharge WE Delay Time
Symbol
t
WP
t
CWL
t
RWL
t
DS
t
DHR
t
CWD
t
RWD
t
AWD
t
CHR
t
RPC
t
DH
t
WCH
t
WCR
t
OEH
t
OED
t
WCS
t
CSR
t
CPWD
MSM511664
C/CL-70
MSM511664
C/CL-80
MSM511664
C/CL-60
Min.
10
20
20
0
40
40
80
50
5
10
0
10
10
40
10
15
0
Max.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
9
9
9
10
9
Min.
15
20
20
0
55
55
105
70
5
10
0
15
15
55
10
15
0
Max.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Min.
10
20
20
0
45
50
95
60
5
10
0
10
10
45
10
15
0
Max.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
9
55
--
ns
75
--
70
--
8/16
Semiconductor
MSM511664C/CL
Notes:
1. A start-up delay of 100
s is required after power-up, followed by a minimum of eight
initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device
operation is achieved.
2. The AC characteristics assume t
T
= 5 ns.
3. V
IH
(Min.) and V
IL
(Max.) are reference levels for measuring input timing signals.
Transition times (t
T
) are measured between V
IH
and V
IL
.
4. This parameter is measured with a load circuit equivalent to 1 TTL load and 50 pF.
5. Operation within the t
RCD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RCD
(Max.) is specified as a reference point only. If t
RCD
is greater than the specified
t
RCD
(Max.) limit, then the access time is controlled by t
CAC
.
6. Operation within the t
RAD
(Max.) limit ensures that t
RAC
(Max.) can be met.
t
RAD
(Max.) is specified as a reference point only. If t
RAD
is greater than the specified
t
RAD
(Max.) limit, then the access time is controlled by t
AA
.
7. t
OFF
(Max.) and t
OEZ
(Max.) define the time at which the output achieves the open
circuit condition and are not referenced to output voltage levels.
8. t
RCH
or t
RRH
must be satisfied for a read cycle.
9. t
WCS
, t
CWD
, t
RWD
, t
AWD
and t
CPWD
are not restrictive operating parameters. They are
included in the data sheet as electrical characteristics only. If t
WCS
t
WCS
(Min.), then
the cycle is an early write cycle and the data out will remain open circuit (high
impedance) throughout the entire cycle. If t
CWD
t
CWD
(Min.) , t
RWD
t
RWD
(Min.),
t
AWD
t
AWD
(Min.) and t
CPWD
t
CPWD
(Min.), then the cycle is a read modify write
cycle and data out will contain data read from the selected cell; if neither of the above
sets of conditions is satisfied, then the condition of the data out (at access time) is
indeterminate.
10. These parameters are referenced to the CAS leading edge in an early write cycle, and
to the WE leading edge in an OE control write cycle, or a read modify write cycle.
9/16
Semiconductor
MSM511664C/CL
TIMING WAVEFORM
Read Cycle
"H" or "L"
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
IH
V
IL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
,,,,
t
RC
t
RAS
t
RP
t
AR
t
CRP
t
RCD
t
CSH
t
RSH
t
CRP
t
CAS
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
Row
Column
t
WCS
t
WCH
t
WCR
t
DHR
t
DS
t
DH
Valid Data-in
t
WP
t
RAL
Open
t
CWL
t
RWL
,
"H" or "L"
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
OH
V
OL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
,,
,
t
RC
t
RAS
t
RP
t
AR
t
CRP
t
CSH
t
CRP
t
RCD
t
RSH
t
CAS
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
Row
Column
t
RCS
t
RRH
t
RCH
t
AA
t
ROH
t
OEA
t
CAC
t
RAC
t
OEZ
t
OFF
Open
t
CLZ
Valid Data-out
Write Cycle (Early Write)
E2G0092-17-41E
10/16
Semiconductor
MSM511664C/CL
"H" or "L"
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
I/OH
V
I/OL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
,
,,
t
RWC
t
RAS
t
RP
t
AR
t
CRP
t
CSH
t
RCD
t
CRP
t
RSH
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
Row
Column
t
CWD
t
CWL
t
RWD
t
RWL
t
WP
t
AA
t
AWD
t
OEA
t
OED
t
CAC
t
RAC
t
OEZ
t
DS
t
DH
t
CLZ
Valid
Data-out
Valid
Data-in
t
RAD
t
RCS
t
OEH
Read Modify Write Cycle
11/16
Semiconductor
MSM511664C/CL
Fast Page Mode Read Cycle
Fast Page Mode Write Cycle (Early Write)
"H" or "L"
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
IH
V
IL
Address
V
IL
WE
V
IH
V
IL
,
,
,
t
RASP
t
RP
t
AR
t
CRP
t
RCD
t
CAS
t
CP
t
CAS
t
RSH
t
CRP
t
CAS
t
ASR
t
RAH
t
CAH
t
CSH
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
Row
Column
Column
Column
t
RAD
t
WCS
t
WCH
t
WP
t
WCS
t
WCH
t
WP
t
WCS
t
WCH
t
WP
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
Valid Data-in
Valid
Data-in
Valid
Data-in
t
DHR
Note:
OE = "H" or "L"
V
IH
t
ASC
t
PC
t
RHCP
t
CP
t
CWL
t
CWL
t
RWL
t
CWL
t
WCR
,
"H" or "L"
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
OH
V
OL
Address
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
,
,
,
t
RASP
t
RP
t
AR
t
CRP
t
RCD
t
PC
t
RSH
t
CRP
t
CAS
t
CAS
t
CP
t
CAS
t
RAD
t
ASR
t
RAH
t
ASC
t
CAH
t
CSH
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
Row
Column
Column
Column
t
RCS
t
RCH
t
RCS
t
RCS
t
RCH
t
AA
t
OEA
t
AA
t
AA
t
RRH
t
OEA
t
OEA
t
CAC
t
RAC
t
OFF
t
OEZ
t
CAC
t
CLZ
t
OFF
t
OEZ
t
CAC
t
CLZ
t
OEZ
t
OFF
t
CLZ
Valid
Data-out
Valid
Data-out
Valid
Data-out
t
RHCP
t
CP
t
RCH
t
CPA
t
CPA
12/16
Semiconductor
MSM511664C/CL
RAS
CAS
V
IH
V
IL
V
IH
V
IL
Address
V
IH
V
IL
,
t
RC
t
RAS
t
RP
t
CRP
t
RPC
t
ASR
t
RAH
Row
"H" or "L"
DQ
V
OH
V
OL
Note:
WE, OE = "H" or "L"
Open
t
OFF
Fast Page Mode Read Modify Write Cycle
t
WP
RAS
CAS
Address
OE
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
WE
V
IH
V
IL
DQ
V
I/OH
V
I/OL
,
,
,
,
,
,
,
t
RASP
t
AR
t
RP
t
CSH
t
PRWC
t
RSH
t
RCD
t
CAS
t
CP
t
CAS
t
CP
t
CAS
t
CRP
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
CAH
t
RAL
Row
Column
Column
Column
t
RWD
t
RCS
t
CWD
t
CWL
t
CWD
t
CWL
t
CWD
t
RWL
t
CWL
t
AWD
t
AWD
t
AWD
t
OEA
t
WP
t
OEA
t
WP
t
OEA
t
AA
t
OED
t
CAC
t
DS
t
DH
t
CAC
t
AA
t
RAC
t
DS
t
DH
t
CPA
t
OED
t
CAC
t
AA
t
DS
t
DH
t
CLZ
t
CLZ
t
CLZ
Out
In
Out
Out
In
In
t
ROH
t
OEZ
t
OEZ
t
CPA
t
OED
t
RCS
t
RCS
t
CPWD
t
CPWD
"H" or "L"
t
OEZ
RAS-Only Refresh Cycle
13/16
Semiconductor
MSM511664C/CL
RAS
CAS
V
IH
V
IL
V
IH
V
IL
Column
Row
DQ
V
OH
V
OL
WE
V
IH
V
IL
OE
V
IH
V
IL
Address
V
IH
V
IL
,,
,
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
AR
t
CRP
t
RCD
t
RSH
t
CHR
t
RAD
t
ASR
t
ASC
t
RAH
t
CAH
t
RCS
t
RAL
t
RRH
t
AA
t
ROH
t
OEA
t
CAC
t
CLZ
t
RAC
t
OFF
t
OEZ
Valid Data-out
,
"H" or "L"
CAS before RAS Refresh Cycle
Hidden Refresh Read Cycle
RAS
CAS
V
IH
V
IL
V
IH
V
IL
t
CHR
Note:
WE, OE, Address = "H" or "L"
DQ
V
OH
V
OL
t
RC
t
RP
t
RAS
t
RP
t
RPC
t
CP
t
CSR
t
RPC
t
OFF
Open
,,
"H" or "L"
14/16
Semiconductor
MSM511664C/CL
Hidden Refresh Write Cycle
RAS
CAS
V
IH
V
IL
V
IH
V
IL
DQ
V
IH
V
IL
WE
V
IH
V
IL
OE
V
IH
V
IL
Address
V
IH
V
IL
,,
,
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
t
AR
t
CRP
t
RCD
t
RSH
t
CHR
t
RAD
t
ASC
t
ASR
t
RAH
t
CAH
t
RAL
Row
Column
t
WCS
t
WCH
t
WP
t
DS
t
DH
Valid Data-in
t
DHR
,
"H" or "L"
t
WCR
15/16
Semiconductor
MSM511664C/CL
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
(Unit : mm)
PACKAGE DIMENSIONS
SOJ40-P-400-1.27
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
1.70 TYP.
Mirror finish
16/16
Semiconductor
MSM511664C/CL
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
(Unit : mm)
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.49 TYP.
TSOP
II44/40-P-400-0.80-K
Mirror finish
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