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Semiconductor
MSM514260E
262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM514260E is a 262,144-word
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology.
The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki
manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM514260E
is available in a 40-pin plastic SOJ, 44/40-pin plastic TSOP.
FEATURES
262,144-word
16-bit configuration
Single 5V power supply,
10% tolerance
Input
: TTL compatible, low input capacitance
Output
: TTL compatible, 3-state
Refresh
: 512 cycles/8 ms
Fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Package options:
40-pin 400mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM514260E-xxJS)
44/40-pin 400mil plastic TSOP
(TSOPII44/40-P-400-0.80-K)
(Product : MSM514260E-xxTS-K)
xx : indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Family
t
RAC
t
AA
t
CAC
t
OEA
Cycle Time
(Min.)
Operating (Max.)
Standby (Max.)
60ns
30ns
15ns
15ns
110ns
633mW
MSM514260E
70ns
35ns
20ns
20ns
130ns
578mW
5.5mW
This version:Aug.2000
MSM514260E
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PIN CONFIGRATION (TOP VIEW)
Pin Name
Function
A0
-
A8
Address Input
RAS
Row Address Strobe
LCAS
Lower Byte Column Address Strobe
UCAS
Upper Byte Column Address Strobe
DQ1 - DQ16
Data Input/Data Output
OE
Output Enable
WE
Write Enable
V
CC
Power Supply (5V)
V
SS
Ground (0V)
NC
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same
GND voltage level must be provided to every V
SS
pin.
40-Pin Plastic SOJ
44/40-Pin Plastic TSOP
(K Type)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
V
CC
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A8
A7
A6
A0
A1
A2
A3
DQ5
DQ6
DQ7
DQ8
NC
NC
WE
RAS
NC
NC
A5
A4
LCAS
UCAS
OE
44
43
42
41
40
36
35
39
38
32
31
30
V
SS
V
SS
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A8
A7
A6
A5
A4
LCAS
UCAS
OE
29
28
27
26
NC
1
2
3
4
5
6
7
8
9
10
DQ1
DQ2
DQ3
DQ4
V
CC
V
CC
DQ5
DQ6
DQ7
DQ8
16
17
18
19
20
21
22
23
24
25
V
CC
A0
A1
A2
A3
NC
WE
RAS
NC
15
NC
14
13
37
MSM514260E
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BLOCK DIAGRAM
FUNCTION TABLE
Input Pin
DQ Pin
RAS
LCAS
UCAS
WE
OE
DQ1-DQ8
DQ9-DQ16
Function Mode
H
*
*
*
*
High-Z
High-Z
Standby
L
H
H
*
*
High-Z
High-Z
Refresh
L
L
H
H
L
D
OUT
High-Z
Lower Byte Read
L
H
L
H
L
High-Z
D
OUT
Upper Byte Read
L
L
L
H
L
D
OUT
D
OUT
Word Read
L
L
H
L
H
D
IN
Don't Care
Lower Byte Write
L
H
L
L
H
Don't Care
D
IN
Upper Byte Write
L
L
L
L
H
D
IN
D
IN
Word Write
L
L
L
H
H
High-Z
High-Z
* : "H" or "L"
A0
-
A8
8
8
8
8
8
8
8
16
8
16
9
9
9
9
Timing
Generator
Column
Address
Buffers
I/O
Controller
Internal
Address
Counter
Row
Address
Buffers
Refresh
Control Clock
I/O
Controller
Column Decoders
Sense Amplifiers
Memory
Cells
Word
Drivers
Row
Deco-
ders
I/O
Selector
Input
Buffers
Input
Buffers
Output
Buffers
Output
Buffers
DQ1 - DQ8
DQ9 - DQ16
OE
WE
RAS
LCAS
UCAS
V
CC
V
SS
On Chip
V
BB
Generator
MSM514260E
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ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage
on
Any Pin Relative to V
SS
V
IN
, V
OUT
-
0.5 to V
CC
+
0.5
V
Voltage V
CC
supply Relative to V
SS
V
CC
-
0.5 to 7.0
V
Short Circuit Output Current
I
OS
50
mA
Power Dissipation
P
D*
1
W
Operating Temperature
T
opr
0 to 70
C
Storage Temperature
T
stg
-
55 to 150
C
*: Ta = 25
C
Recommended Operating Conditions
(Ta = 0C to 70C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
4.5
5.0
5.5
V
Power Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
V
CC
+
0.5
*1
V
Input Low Voltage
V
IL
-
0.5
*2
0.8
V
Notes:
*1. The input voltage is V
CC
+
2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
-
2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 5V 10%, Ta = 25C, f=1MHz)
Parameter
Symbol
Typ.
Max.
Unit
Input Capacitance (A0 A8)
C
IN1
5
pF
Input Capacitance
(
RAS
,
LCAS
,
UCAS
,
WE
,
OE
)
C
IN2
7
pF
Output Capacitance (DQ1 DQ16)
C
I/O
7
pF
MSM514260E
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DC Characteristics
(V
CC
= 5V 10%, Ta = 0C to 70C)
MSM514260
E-60
MSM514260
E-70
Parameter
Symbol
Condition
Min.
Max
.
Min.
Max
.
Unit Note
Output High Voltage
V
OH
I
OH
=
-
5.0mA
2.4
V
CC
2.4
V
CC
V
Output Low Voltage
V
OL
I
OL
= 4.2mA
0
0.4
0
0.4
V
Input Leakage Current
I
LI
0V
V
I
6.5V ;
All other pins not
under test = 0V
-
10
10
-
10
10
A
Output Leakage Current
I
LO
DQ disable
0V
V
O
VCC
-
10
10
-
10
10
A
Average Power Supply Current
(Operating)
I
CC1
RAS
,
CAS
cycling,
t
RC
= Min.
115
105
mA
1,2
RAS
,
CAS
= V
IH
2
2
Power Supply Current
(Standby)
I
CC2
RAS
,
CAS
V
CC
0.2V
1
1
mA
1
Average Power Supply Current
(
RAS
-only Refresh)
I
CC3
RAS
cycling,
CAS
= V
IH
,
t
RC
= Min.
115
105
mA
1,2
Power Supply Current
(Standby)
I
CC5
RAS
= V
IH
,
CAS
= V
IL
,
DQ = enable
5
5
mA
1
Average Power Supply Current
(
CAS
before
RAS
Refresh)
I
CC6
RAS
= cycling,
CAS
before
RAS
115
105
mA
1,2
Average Power Supply Current
(Fast Page Mode)
I
CC7
RAS
= V
IL
,
CAS
cycling,
t
PC
= Min.
115
105
mA
1,3
Notes: 1.
I
CC
Max. is specified as I
CC
for output open condition.
2.
The address can be changed once or less while
RAS = V
IL
.
3.
The address can be changed once or less while
CAS = V
IH
.
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