1/17
Semiconductor
MSM514400D/DL
DESCRIPTION
The MSM514400D/DL is a 1,048,576-word 4-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514400D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514400D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514400DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
1,048,576-word 4-bit configuration
Single 5 V power supply,
10% tolerance
Input
: TTL compatible, low input capacitance
Output : TTL compatible, 3-state
Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
Fast page mode, read modify write capability
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Multi-bit test mode capability
Package options:
26/20-pin 300 mil plastic SOJ
(SOJ26/20-P-300-1.27)
(Product : MSM514400D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514400D/DL-xxZS)
26/20-pin 300 mil plastic TSOP
(TSOPII26/20-P-300-1.27-K) (Product : MSM514400D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Semiconductor
MSM514400D/DL
1,048,576-Word
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM514400D/DL-70
70 ns
130 ns
90 ns
440 mW
550 mW
5.5 mW/
Family
Access Time (Max.)
Cycle Time
(Min.)
Standby (Max.)
Power Dissipation
MSM514400D/DL-50
t
RAC
50 ns
35 ns
t
AA
25 ns
20 ns
t
CAC
13 ns
20 ns
t
OEA
13 ns
MSM514400D/DL-60
60 ns
110 ns
495 mW
30 ns
15 ns
15 ns
Operating (Max.)
1.1 mW (L-version)
E2G0023-17-41
This version: Jan. 1998
Previous version: May 1997
4/17
Semiconductor
MSM514400D/DL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Recommended Operating Conditions
Capacitance
*: Ta = 25
C
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
V
T
Symbol
I
OS
P
D
*
T
opr
T
stg
1.0 to 7.0
50
1
0 to 70
55 to 150
Rating
mA
W
C
C
Parameter
V
Unit
Power Supply Voltage
Input High Voltage
Input Low Voltage
V
CC
Symbol
V
SS
V
IH
V
IL
5.0
0
--
--
Typ.
Parameter
4.5
0
2.4
1.0
Min.
5.5
0
6.5
0.8
Max.
(Ta = 0C to 70C)
V
Unit
V
V
V
Input Capacitance (A0 - A9)
Input Capacitance (
RAS, CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
C
IN1
Symbol
C
IN2
C
I/O
6
7
7
Max.
pF
Unit
pF
pF
Parameter
(V
CC
= 5 V 10%, Ta = 25C, f = 1 MHz)
--
--
--
Typ.
5/17
Semiconductor
MSM514400D/DL
DC Characteristics
Parameter
Symbol
Condition
MSM514400
D/DL-50
MSM514400
D/DL-60
MSM514400
D/DL-70
(V
CC
= 5 V 10%, Ta = 0C to 70C)
I
OH
= 5.0 mA
Output High Voltage
I
OL
= 4.2 mA
Output Low Voltage
0 V V
I
6.5 V;
All other pins not
Input Leakage Current
under test = 0 V
DQ disable
Output Leakage Current
0 V V
O
5.5 V
RAS, CAS cycling,
Average Power
t
RC
= Min.
Supply Current
(Operating)
RAS, CAS = V
IH
Power Supply
RAS, CAS
Current (Standby)
RAS cycling,
Average Power
CAS = V
IH
,
Supply Current
t
RC
= Min.
(
RAS-only Refresh)
RAS = V
IH
,
Power Supply
CAS = V
IL
,
Current (Standby)
DQ = enable
Average Power
CAS before RAS
Supply Current
(
CAS before RAS Refresh)
RAS = V
IL
,
Average Power
CAS cycling,
Supply Current
t
PC
= Min.
(Fast Page Mode)
t
RC
= 125 ms,
Average Power
V
OH
V
OL
I
LI
I
LO
I
CC1
I
CC2
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
CAS before RAS,
Supply Current
t
RAS
1 ms
(Battery Backup)
V
CC
0.2 V
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
100
2
1
100
5
100
80
300
200
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
90
2
1
90
5
90
70
300
200
Min.
2.4
0
10
10
--
--
--
--
--
--
--
--
--
Max.
V
CC
0.4
10
10
80
2
1
80
5
80
60
300
200
Unit
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2
1
1, 2
1
1, 2
1, 3
1, 4,
5
1, 5
RAS cycling,
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while RAS = V
IL
.
3. The address can be changed once or less while CAS = V
IH
.
4. V
CC
0.2 V V
IH
6.5 V, 1.0 V V
IL
0.2 V.
5. L-version.
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