1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon
High-Power Transistors
. . . PowerBase complementary transistors designed for high power audio, stepping
motor and other linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or
for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.
CurrentGain -- BandwidthProduct @ IC = 1.0 Adc
fT = 0.8 MHz (Min) NPN
= 2.2 MHz (Min) PNP
Safe Operating Area -- Rated to 60 V and 120 V, Respectively
*MAXIMUM RATINGS
Rating
Symbol
2N3055A
MJ2955A
MJ15015
MJ15016
Unit
CollectorEmitter Voltage
VCEO
60
120
Vdc
CollectorBase Voltage
VCBO
100
200
Vdc
CollectorEmitter Voltage Base
Reversed Biased
VCEV
100
200
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
Collector Current -- Continuous
IC
15
Adc
Base Current
IB
7.0
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
115
0.65
180
1.03
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.52
0.98
_
C/W
* Indicates JEDEC Registered Data. (2N3055A)
200
0
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
MJ15015
MJ15016
P
,
A
VERAGE POWER DISSIP
A
TION (W)
D(A
V)
150
100
50
2N3055A
MJ2955A
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055A/D
Motorola, Inc. 1995
2N3055A
MJ15015
MJ2955A
MJ15016
PNP
NPN
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS
CASE 107
TO204AA
(TO3)
*
*
REV 1
2N3055A MJ15015 MJ2955A MJ15016
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
*CollectorEmitter Sustaining Voltage
2N3055A, MJ2955A
(IC = 200 mAdc, IB = 0)
MJ15015, MJ15016
VCEO(sus)
60
120
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
2N3055A, MJ2955A
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
MJ15015, MJ15016
ICEO
--
--
0.7
0.1
mAdc
*Collector Cutoff Current
2N3055A, MJ2955A
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
MJ15015, MJ15016
ICEV
--
--
5.0
1.0
mAdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
2N3055A, MJ2955A
TC = 150
_
C)
MJ15015, MJ15016
ICEV
--
--
30
6.0
mAdc
Emitter Cutoff Current
2N3055A, MJ2955A
(VEB = 7.0 Vdc, IC = 0)
MJ15015, MJ15016
IEBO
--
--
5.0
0.2
mAdc
*SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s nonrepetitive)
2N3055A, MJ2955A
(VCE = 60 Vdc)
MJ15015, MJ15016
IS/b
1.95
3.0
--
--
Adc
*ON CHARACTERISTICS (1)
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
10
20
5.0
70
70
--
--
CollectorEmitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
VCE(sat)
--
--
--
1.1
3.0
5.0
Vdc
BaseEmitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
0.7
1.8
Vdc
*DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
2N3055A, MJ15015
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
MJ2955A, MJ15016
fT
0.8
2.2
6.0
18
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
60
600
pF
*SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD
Delay Time
v
2%
td
--
0.5
s
Rise Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25
s Duty Cycle
v
2%
tr
--
4.0
s
Storage Time
IB1 = IB2 = 0.4 Adc,
tp = 25
s Duty Cycle
v
2%
ts
--
3.0
s
Fall Time
p = 25
s Duty Cycle
v
2%
tf
--
6.0
s
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2%.
* Indicates JEDEC Registered Data. (2N3055A)
2N3055A MJ15015 MJ2955A MJ15016
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
Figure 2. DC Current Gain
200
0.2
IC, COLLECTOR CURRENT (AMP)
2
0.3 0.5 0.7
1
2
3
5
7
15
70
30
10
5
100
50
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 4.0 V
20
7
3
10
Figure 3. Collector Saturation Region
2.8
0.005
IB, BASE CURRENT (AMP)
0
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
2
1.6
0.8
0.4
IC = 1 A
TJ = 25
C
4 A
2.4
1.2
8 A
f
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
T
3.5
0.2
IC, COLLECTOR CURRENT (AMP)
0.3
0.5 0.7
1
2
3
5
7
20
2.5
1.5
1
0.5
0
TC = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
Figure 4. "On" Voltages
3
2
10
VBE(on) @ VCE = 4 V
10
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
0.3
0.5
1.0
2.0
5.0
2.0
1.0
MJ2955A
MJ15016
Figure 5. CurrentGain -- Bandwidth Product
2N3055A
MJ15015
Figure 6. Switching Times Test Circuit
(Circuit shown is for NPN)
+13 V
25
s
0
11 V
30
5 V
1N6073
SCOPE
VCC
+ 30 V
7.5
tr, tf
10 ns
DUTY CYCLE = 1.0%
10
0.2
Figure 7. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
7
5
3
2
1
0.7
0.5
0.1
0.3
0.5 0.7
1
2
3
7
15
VCC = 30 V
IC/IB = 10
TJ = 25
C
0.3
0.2
5
10
tr
td
2N3055A MJ15015 MJ2955A MJ15016
4
Motorola Bipolar Power Transistor Device Data
10
0.2
Figure 8. TurnOff Times
IC, COLLECTOR CURRENT (AMPS)
7
5
3
2
0.1
0.5
0.1
0.3
0.5 0.7
1
3
5
15
VCC = 30
IC/IB = 10
IB1 = IB2
TJ = 25
C
0.3
t,
TIME (
s)
tf
ts
2
0.7
0.2
7
10
400
1.0
Figure 9. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
20
20
50
100
200
500 1000
2.0
5.0
10
C, CAP
ACIT
ANCE (pF)
200
100
50
30
TJ = 25
C
Cib
Cob
2N3055A
MJ15015
MJ2955A
MJ15016
COLLECTOR CUTOFF REGION
10,000
+ 0.2
Figure 10. 2N3055A, MJ15015
VBE, BASEEMITTER VOLTAGE (VOLTS)
1000
100
10
1.0
, COLLECT
OR CURRENT
(
A)
I C
0.1
0.01
+ 0.1
0
0.1
0.2
0.3
0.4
0.5
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
IC = ICES
NPN
1000
0.2
Figure 11. MJ2955A, MJ15016
VBE, BASEEMITTER VOLTAGE (VOLTS)
100
10
1.0
0.1
, COLLECT
OR CURRENT
(
A)
I C 0.01
0.001
0.1
0
+ 0.1
+ 0.2
+ 0.3
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
IC = ICES
PNP
+ 0.4
+ 0.5
20
Figure 12. Forward Bias Safe Operating Area
2N3055A, MJ2955A
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5
1
10
20
100
60
2
I C
, COLLECT
OR CURRENT
(AMPS)
dc
30
s
1 ms
100
s
100 ms
20
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
5.0
0.2
15
20
100
60
2.0
I C
, COLLECT
OR CURRENT
(AMP)
dc
0.1 ms
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
1.0
0.5
30
120
1.0 ms
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe Operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25
_
C;
TJ(pk) is variable depending on power level. Second break-
down pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.
2N3055A MJ15015 MJ2955A MJ15016
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
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