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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
40
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
--
Vdc
Collector Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
60
--
Vdc
Emitter Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0
--
Vdc
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
IBEV
--
0.1
Adc
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
ICEX
--
0.1
Adc
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N4400/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
2N4400
2N4401
*Motorola Preferred Device
*
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
2N4400 2N4401
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
2N4401
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 10 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 150 mAdc, VCE = 1.0 Vdc)
2N4400
2N4401
(IC = 500 mAdc, VCE = 2.0 Vdc)
2N4400
2N4401
hFE
20
20
40
40
80
50
100
20
40
--
--
--
--
--
150
300
--
--
--
Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.4
0.75
Vdc
Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.75
--
0.95
1.2
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
2N4400
2N4401
fT
200
250
--
--
MHz
CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
6.5
pF
EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
--
30
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
hie
0.5
1.0
7.5
15
k ohms
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
0.1
8.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
hfe
20
40
250
500
--
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
1.0
30
mhos
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
--
15
ns
Rise Time
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
tr
--
20
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
--
225
ns
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
tf
--
30
ns
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
Figure 1. TurnOn Time
Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+16 V
2.0 V
< 2.0 ns
0
1.0 to 100
s,
DUTY CYCLE
2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
+16 V
14 V
0
< 20 ns
1.0 to 100
s,
DUTY CYCLE
2.0%
1.0 k
+ 30 V
200
CS* < 10 pF
4.0 V
2N4400 2N4401
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
0.1
2.0
5.0
10
20
2.0
30
50
CAP
ACIT
ANCE (pF)
Q, CHARGE (nC)
3.0
2.0
3.0
5.0
7.0
10
1.0
10
20
50
70
100
200
0.1
300
500
0.7
0.5
VCC = 30 V
IC/IB = 10
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
Figure 6. Rise and Fall Times
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
10
5.0
7.0
Cobo
QT
QA
25
C
100
C
TRANSIENT CHARACTERISTICS
3.0
1.0
0.5
0.3
0.2
0.3
0.2
30
t s
, ST
ORAGE
TIME (ns)
t,
TIME (ns)
t,
TIME (ns)
t f
, F
ALL
TIME (ns)
Ccb
70
100
10
20
50
70
100
200
300
500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
20
30
50
5.0
10
7.0
70
100
10
20
50
70
100
200
300
500
30
VCC = 30 V
IC/IB = 10
tr
tf
10
20
50
70
100
200
300
500
30
100
200
30
70
50
300
10
20
50
70
100
200
300
500
30
ts
= ts 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
2N4400 2N4401
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
6.0
8.0
10
0
4.0
2.0
0.1
2.0 5.0
10
20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
Figure 9. Frequency Effects
f, FREQUENCY (kHz)
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25
C
Bandwidth = 1.0 Hz
NF
, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150
IC = 500
A, RS = 200
IC = 100
A, RS = 2.0 k
IC = 50
A, RS = 4.0 k
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
100 k
50
100 200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
6.0
8.0
10
0
4.0
2.0
NF
, NOISE FIGURE (dB)
Figure 10. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
f = 1.0 kHz
IC = 50
A
IC = 100
A
IC = 500
A
IC = 1.0 mA
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25
C
This group of graphs illustrates the relationship between
hfe and other "h" parameters for this series of transistors. To
obtain these curves, a highgain and a lowgain unit were
selected from both the 2N4400 and 2N4401 lines, and the
same units were used to develop the correspondingly num-
bered curves on each graph.
Figure 11. Current Gain
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7 1.0
2.0
3.0
10
0.3
100
200
20
70
50
300
h
fe
, CURRENT
GAIN
h ie
, INPUT
IMPEDANCE (OHMS)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
50 k
500
30
5.0 7.0
20 k
10 k
5.0 k
2.0 k
1.0 k
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
5.0 7.0
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 0.7
1.0
2.0
3.0
10
0.3
0.2
10
Figure 14. Output Admittance
IC, COLLECTOR CURRENT (mA)
100
1.0
5.0 7.0
50
20
10
5.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
h , OUTPUT
ADMITT
ANCE ( mhos)
oe
h , VOL
T
AGE FEEDBACK RA
TIO (X 10 )
re
m
4
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
2N4400 2N4401
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
STATIC CHARACTERISTICS
Figure 15. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 16. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.5
2.0
3.0
50
0.2
0.3
0
1.0
0.7
5.0 7.0
CE
IC = 1.0 mA
TJ = 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
100 mA
10
20
30
500 mA
0.3
0.5
0.7
1.0
3.0
0.1
h , NORMALIZED CURRENT
GAIN
0.5
2.0
3.0
10
50
70
0.2
0.3
0.2
100
1.0
0.7
500
30
20
5.0
7.0
FE
TJ = 125
C
55
C
2.0
200
300
25
C
VCE = 1.0 V
VCE = 10 V
Figure 17. "On" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
VOL
T
AGE (VOL
TS)
1.0 2.0
5.0
10
20
50
0
100
0.5
0
+ 0.5
1.0
1.5
2.0
500
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
q
VC for VCE(sat)
q
VB for VBE
200
0.1 0.2
0.5
COEFFICIENT
(mV/
C)
2.5
1.0
2.0
5.0
10
20
50
100
500
200
0.1 0.2
0.5
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