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1
Motorola Bipolar Power Transistor Device Data
NPN Silicon Transistors
. . . fast switching speeds and high current capacity ideally suit these parts for use in
switching regulators, inverters, wideband amplifiers and power oscillators in
industrial and commercial applications.
High Speed -- tf = 0.5
s (Max)
High Current -- IC(max) = 30 Amps
Low Saturation -- VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
*MAXIMUM RATINGS
Rating
Symbol
2N5038
2N5039
Unit
CollectorBase Voltage
VCBO
150
120
Vdc
CollectorEmitter Voltage
VCEV
150
120
Vdc
EmitterBase Voltage
VEBO
7
Vdc
Collector Current -- Continuous
Peak (1)
IC
ICM
20
30
Adc
Base Current -- Continuous
IB
5
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
140
0.8
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 200
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.25
_
C/W
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
10 ms, Duty Cycle
v
50%.
Figure 1. Switching Time Test Circuit
0
+11 V
10
5 V
1N4933
VCC
RC
2.5
IC = 12 AMPS
IB1 = IB2 = 1.2 AMPS
9 V
2N5038
+ 30 V
PW = 20
s
DUTY CYCLE = 1%
IC = 10 AMPS
IB1 = IB2 = 1.0 AMPS
2N5039
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5038/D
Motorola, Inc. 1995
2N5038
2N5039
*Motorola Preferred Device
20 AMPERE
NPN SILICON
POWER TRANSISTORS
75 and 90 VOLTS
140 WATTS
*
CASE 107
TO204AA
(TO3)
REV 7
2N5038 2N5039
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N5038
2N5039
VCEO(sus)
90
75
--
--
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
2N5038
(VCE = 110 Vdc, VBE(off) = 1.5 V)
2N5039
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
2N5038
(VCE = 85 Vdc, VBE(off) = 1.5 Vdc, TC = 150
_
C)
2N5039
ICEX
--
--
--
--
50
50
10
10
mAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
2N5038
2N5039
(VEB = 7 Vdc, IC = 0)
Both
IEBO
--
--
--
5
15
50
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
2N5038
(IC = 10 Adc, VCE = 5 Vdc)
2N5039
hFE
20
20
100
100
--
CollectorEmitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
--
2.5
Vdc
BaseEmitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
--
3.3
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of CommonEmitter SmallSignal ShortCircuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
|hfe|
12
--
--
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
tr
--
0.5
s
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
2N5038
ts
--
1.5
s
Fall Time
(IC = 10 Adc, IB1 = IB2 = 1 Adc)
2N5039
tf
--
0.5
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300,
s, Duty Cycle
v
2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
5
2
0.1
1
10
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
70
1
I C
, COLLECT
OR CURRENT
(AMPS)
dc
50
20
10
0.5
0.2
2
3
5
7
20
30
50
TC = 25
C
2N5039
2N5038
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
2N5038 2N5039
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.550 REF
39.37 REF
B
1.050
26.67
C
0.250
0.335
6.35
8.51
D
0.038
0.043
0.97
1.09
E
0.055
0.070
1.40
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.830
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005)
Y
M
T
M
Y
M
0.13 (0.005)
T
Q
Y
2
1
U
L
G
B
V
H
CASE 107
TO204AA (TO3)
ISSUE Z
2N5038 2N5039
4
Motorola Bipolar Power Transistor Device Data
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2N5038/D
*2N5038/D*
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