Document:
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5088
2N5089
Unit
CollectorEmitter Voltage
VCEO
30
25
Vdc
CollectorBase Voltage
VCBO
35
30
Vdc
EmitterBase Voltage
VEBO
3.0
Vdc
Collector Current -- Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
(1)
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
2N5088
2N5089
V(BR)CEO
30
25
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
2N5088
2N5089
V(BR)CBO
35
30
--
--
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
2N5088
(VCB = 15 Vdc, IE = 0)
2N5089
ICBO
--
--
50
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
IEBO
--
--
50
100
nAdc
1. R
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 1
1
Publication Order Number:
2N5088/D
2N5088
2N5089
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
2N5088 2N5089
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2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100
Adc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
2N5088
2N5089
hFE
300
400
350
450
300
400
900
1200
--
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
--
0.5
Vdc
BaseEmitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)(2)
VBE(on)
--
0.8
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 500
Adc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
--
MHz
CollectorBase Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
4.0
pF
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
--
10
pF
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N5088
2N5089
hfe
350
450
1400
1800
--
Noise Figure
(IC = 100
Adc, VCE = 5.0 Vdc, RS = 1.0 k
,
2N5088
f = 1.0 kHz)
2N5089
NF
--
--
3.0
2.0
dB
2. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2N5088 2N5089
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3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
NOISE VOLTAGE
e n
, NOISE VOL
T
AGE (nV)
e n
, NOISE VOL
T
AGE (nV)
I n
, NOISE CURRENT
(pA)
NF
, NOISE FIGURE (dB)
20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300
A
30
A
RS
0
3.0 mA
1.0 mA
7.0
10
20
30
5.0
3.0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
RS
0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300
A
100
A
10
A
RS
0
10
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500
A
100
A
10
A
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
V T
,
T
O
T
A
L
NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz
IC = 10 mA
3.0 mA
1.0 mA
300
A
100
A
30
A
10
A
10 20
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
IC = 10 mA
300
A
100
A
30
A
3.0 mA
1.0 mA
10
A
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
2N5088 2N5089
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4
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT
GAIN (NORMALIZED)
0.05
2.0
3.0
10
0.02
0.03
0.2
1.0
0.1
5.0
FE
VCE = 5.0 V
TA = 125
C
25
C
-55
C
0.7
0.5
0.5
0.2
0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
Figure 9. "On" Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
0.01
0
-0.8
-1.2
-1.6
-2.4
TJ = 25
C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25
C to 125
C
-55
C to 25
C
R
VBE
, BASE-EMITTER
TEMPERA
TURE COEFFICIENT
(mV/
C)
-0.4
-2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
TJ = 25
C
Ccb
Cob
Ceb
Cib
1.0
2.0
5.0
3.0
7.0 10
20
30
50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25
C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
2N5088 2N5089
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5
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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