Semiconductor Components Industries, LLC, 2001
September, 2001 Rev. 3
1
Publication Order Number:
2N5457/D
2N5457, 2N5458
2N5457 and 2N5458 are Preferred Devices
JFETs - General Purpose
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode (Type
A) designed for audio and switching applications.
NChannel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low Transfer and Input Capacitance
Low CrossModulation and Intermodulation Distortion
Unibloc Plastic Encapsulated Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS
25
Vdc
DrainGate Voltage
VDG
25
Vdc
Reverse GateSource Voltage
VGSR
25
Vdc
Gate Current
IG
10
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
310
2.82
mW
mW/
C
Operating Junction Temperature
TJ
135
C
Storage Temperature Range
Tstg
65 to +150
C
Device
Package
Shipping
ORDERING INFORMATION
2N5457
TO92
TO92
CASE 29
STYLE 5
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N5458
TO92
5000 Units/Box
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
2N
5457
YWW
2N
5458
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5457, 2N5458
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Min
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 10
Adc, VDS = 0)
V(BR)GSS
25
25
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100
C)
IGSS
1.0
200
nAdc
GateSource Cutoff Voltage
2N5457
(VDS = 15 Vdc, iD = 1 nAdc)
2N5458
VGS(off)
1.0
2.0
6.0
7.0
Vdc
GateSource Voltage
(VDS = 15 Vdc, iD = 100
Adc)
2N5457
(VDS = 15 Vdc, iD = 200
Adc)
2N5458
VGS
2.5
3.5
6.0
7.0
Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (Note 1.)
2N5638
(VDS = 20 Vdc, VGS = 0)
2N5639
IDSS
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1.)
2N5638
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
2N5639
|Yfs|
1000
1500
3000
4000
5000
5500
mhos
Forward Transfer Admittance (Note 1.)
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
|Yos|
10
50
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Ciss
4.5
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
Crss
1.5
3.0
pF
1. Pulse Width
630 ms, Duty Cycle
10%.
RS, SOURCE RESISTANCE (Megohms)
Figure 1. Noise Figure versus Source Resistance
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer Characteristics
14
1.0
0.4
0.2
0
12
10
8
6
4
2
-1.2
0.8
0.6
0
5
10
15
20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
-0.8
-0.4
0
1.2
0
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
NF
, NOISE FIGURE (dB)
0.001
0.01
0.1
1.0
10
VDS = 15 V
VGS = 0
f = 1 kHz
VDS = 15 V
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
VGS(off) ^ -1.2 V
VGS(off) ^ -1.2 V
2N5457, 2N5458
http://onsemi.com
3
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 5. Common Source Transfer
Characteristics
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Common Source Transfer
Characteristics
0
0
4
3
2
1
0
10
4
2
0
-4
5
5
10
15
20
25
5
4
3
2
1
0
-7
8
6
-6
-5
-4
-3
-2
-1
-5
-3
-2
-1
0
, DRAIN CURRENT
(mA)
DI
VDS = 15 V
VGS(off) ^ -5.8 V
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
, DRAIN CURRENT
(mA)
DI
VDS = 15 V
10
4
2
0
8
6
0
5
10
15
20
25
VGS(off) ^ -5.8 V
VGS = 0 V
VGS = 0 V
-2 V
-1 V
-3 V
-1 V
-2 V
-3 V
-4 V
-5 V
VGS(off) ^ -3.5 V
VGS(off) ^ -3.5 V
NOTE:
Note: Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under
dc conditions, self heating in higher IDSS units reduces IDSS.
2N5457, 2N5458
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
2N5457/D
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