High-Current Complementary
Silicon Power Transistors
. . . designed for use in highpower amplifier and switching circuit
applications.
High Current Capability
I
C
Continuous = 50 Amperes.
DC Current Gain
h
FE
= 1560 @ I
C
= 25 Adc
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 25 Adc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5684
2N5686
Unit
CollectorEmitter Voltage
V
CEO
80
Vdc
CollectorBase Voltage
V
CB
80
Vdc
EmitterBase Voltage
V
EB
5.0
Vdc
Collector Current Continuous
I
C
50
Adc
Base Current
I
B
15
Adc
Total Device Dissipation @ T
C
= 25
_
C
Derate above 25
_
C
P
D
300
1.715
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200
_
C
THERMAL CHARACTERISTICS (1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
0.584
_
C/W
(1) Indicates JEDEC Registered Data.
300
0
0
20
40
60
80
100
120 140 160 180 200
Figure 1. Power Derating
TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
250
150
100
50
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev. 10
1
Publication Order Number:
2N5684/D
2N5684
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
6080 VOLTS
300 WATTS
CASE 197A05
TO204AE
PNP
NPN
2N5684 2N5686
http://onsemi.com
2
*ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(I
C
= 0.2 Adc, I
B
= 0)
V
CEO(sus)
80
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
I
CEO
1.0
mAdc
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150
_
C)
I
CEX
2.0
10
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
2.0
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 25 Adc, V
CE
= 2.0 Vdc)
(I
C
= 50 Adc, V
CE
= 5.0 Vdc)
h
FE
15
5.0
60
CollectorEmitter Saturation Voltage (Note 2)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
(I
C
= 50 Adc, I
B
= 10 Adc)
V
CE(sat)
1.0
5.0
Vdc
BaseEmitter Saturation Voltage (Note 1) (I
C
= 25 Adc, I
B
= 2.5 Adc)
V
BE(sat)
2.0
Vdc
BaseEmitter On Voltage (Note 1) (I
C
= 25 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (I
C
= 5.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
2.0
MHz
Output Capacitance
2N5684
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
2N5686
C
ob
2000
1200
pF
SmallSignal Current Gain (I
C
= 10 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
h
fe
15
*Indicates JEDEC Registered Data.
Note 2: Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 2. Switching Time Test Circuit
1.0
0.5
Figure 3. TurnOn Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME
(s)
0.7
0.5
0.2
0.07
0.05
0.02
0.01
0.7 1.0
2.0
3.0
5.0 7.0 10
50
T
J
= 25
C
I
C
/I
B
= 10
V
CC
= 30 V
0.03
0.3
30
0.1
20
2N5684 (PNP)
2N5686 (NPN)
t
r
t
d
+2.0 V
0
t
r
20 ns
-12 V
10 to 100
s
DUTY CYCLE
2.0%
R
B
R
L
V
CC
-30 V
TO SCOPE
t
r
20 ns
V
CC
-30 V
TO SCOPE
t
r
20 ns
R
L
R
B
+10 V
0
-12 V
10 to 100
s
DUTY CYCLE
2.0%
t
r
20 ns
V
BB
+4.0 V
FOR CURVES OF FIGURES 3 & 6, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
2N5684 2N5686
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
2000
500
JC
(t) = r(t)
JC
JC
= 0.584
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
0.1
1000
0.2
100
1.0
Figure 5. ActiveRegion Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0 3.0
7.0 10
20 30
50
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
C
(SINGLE PULSE)
70
2.0
I C
, COLLECT
OR CURRENT
(AMP)
T
J
= 200
C
CURVES APPLY BELOW
RATED V
CEO
dc
1.0 ms
500
s
1.0
0.5
0.2
5.0
100
s
5.0 ms
2N5684, 2N5686
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200
_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4.0
0.5
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (AMP)
2.0
1.0
0.6
0.4
0.2
0.7 1.0
2.0 3.0
7.0
20
50
T
J
= 25
C
I
B1
= I
B2
I
C
/I
B
= 10
V
CE
= 30 V
0.3
t, TIME
(s)
t
s
5.0
5000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
500
2.0
5.0
10
20
100
50
0.2
0.5
1.0
C, CAP
ACIT
ANCE (pF)
3000
1000
700
T
J
= 25
C
0.8
3.0
30
2000
10
2N5684 (PNP)
2N5686 (NPN)
t
f
C
ib
2N5684 (PNP)
2N5686 (NPN)
C
ob
C
ob
C
ib
2N5684 2N5686
http://onsemi.com
4
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
500
0.5
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
5.0
0.7 1.0
2.0
5.0 7.0 10
20
50
70
30
20
10
100
50
h FE
, DC CURRENT
GAIN
T
J
= +150
C
+25
C
-55
C
7.0
200
300
V
CE
= 2.0 V
V
CE
= 10 V
3.0
30
PNP
2N5684
I
C
, COLLECTOR CURRENT (AMP)
h FE
, DC CURRENT
GAIN
T
J
= +150
C
+25
C
-55
C
V
CE
= 2.0 V
V
CE
= 10 V
NPN
2N5686
Figure 9. Collector Saturation Region
2.0
0.1
I
B
, BASE CURRENT (AMP)
0
0.2
1.0
2.0
5.0
10
0.8
0.4
I
C
= 10 A
T
J
= 25
C
25 A
1.2
1.6
0.5
3.0
40 A
0.1
I
B
, BASE CURRENT (AMP)
0.2
1.0
2.0
5.0
10
I
C
= 10 A
T
J
= 25
C
25 A
0.5
3.0
40 A
0.3
2.5
0.5
I
C
, COLLECTOR CURRENT (AMP)
0.7 1.0
2.0 3.0
5.0
10
20
50
2.0
1.5
1.0
0.5
0
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
,
VOL
T
AGE (VOL
TS)
Figure 10. "On" Voltages
30
V
BE
@ V
CE
= 2.0 V
7.0
2.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
0.7 1.0
2.0
3.0
5.0
10
20
50
1.6
1.2
0.8
0.4
0
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
,
VOL
T
AGE (VOL
TS)
30
V
BE
@ V
CE
= 2.0 V
500
0.5
5.0
0.7 1.0
2.0
5.0 7.0 10
20
50
70
30
20
10
100
50
7.0
200
300
3.0
30
2.0
0
0.8
0.4
1.2
1.6
2N5684 2N5686
http://onsemi.com
5
PACKAGE DIMENSIONS
CASE 197A05
TO204AE
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
1.530 REF
38.86 REF
B
0.990
1.050
25.15
26.67
C
0.250
0.335
6.35
8.51
D
0.057
0.063
1.45
1.60
E
0.060
0.070
1.53
1.77
G
0.430 BSC
10.92 BSC
H
0.215 BSC
5.46 BSC
K
0.440
0.480
11.18
12.19
L
0.665 BSC
16.89 BSC
N
0.760
0.830
19.31
21.08
Q
0.151
0.165
3.84
4.19
U
1.187 BSC
30.15 BSC
V
0.131
0.188
3.33
4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012)
Y
M
T
M
Y
M
0.25 (0.010)
T
Q
Y
2
1
L
G
B
V
H
U
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