High Voltage NPN Silicon
Power Transistors
. . . designed for high voltage inverters, switching regulators and
lineoperated amplifier applications. Especially well suited for
switching power supply applications.
High CollectorEmitter Sustaining Voltage
VCEO(sus) = 250 Vdc (Min)
Excellent DC Current Gain
hFE = 1075 @ IC = 2.5 Adc
Low CollectorEmitter Saturation Voltage @ IC = 2.5 Adc
VCE(sat) = 1.0 Vdc (Max)
MAXIMUM RATINGS (1)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCB
350
Vdc
EmitterBase Voltage
VEB
6.0
Vdc
Collector Current Continuous
Peak
IC
5.0
10
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
80
0.64
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ,Tstg
65 to +150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.56
_
C/W
(1) Indicates JEDEC Registered Data.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 11
1
Publication Order Number:
2N6497/D
2N6497
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 VOLT
80 WATTS
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
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2
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0)
VCEO(sus)
250
Vdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100
_
C)
ICEX
1.0
10
mAdc
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
hFE
10
3.0
75
CollectorEmitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VCE(sat)
1.0
5.0
Vdc
BaseEmitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VBE(sat)
1.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
5.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
150
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
tr
0.4
1.0
s
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
ts
1.4
2.5
s
Fall Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
tf
0.45
1.0
s
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 1. Switching Time Test Circuit
1.0
Figure 2. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.05
5.0
VCC = 125 V
IC/IB = 5.0
TJ = 25
C
1.0
0.1
2.0
+ 11 V
0
SCOPE
RB [ 20
- 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
- 9.0 V
D1
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
+ 125 V
RC [ 50
tr
td @ VBE(off) = 5.0 V
t, TIME
(s)
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07
3.0
0.3
0.2
0.5 0.7
2N6497
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3
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC(max) = 1.56
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
20
Figure 4. ActiveRegion Safe Operating Area
2.0
10
20
500
TC = 25
C
0.2
5.0
0.5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
70
1.0
0.02
dc
5.0
100
7.0
CURVES APPLY BELOW RATED VCEO
5.0 ms
1.0 ms
100
s
I C
, COLLECT
OR CURRENT
(AMP)
0.1
0.05
30
50
300
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltage shown on
Figure 4 may be found at any case temperature by using the
appropriate curve on Figure 6.
Figure 5. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
VCC = 125 V
IC/IB = 5.0
TJ = 25
C
ts
tf
t, TIME
(s)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.3
0.2
0.05
5.0
1.0
0.1
2.0
0.07
3.0
0.3
0.2
0.5 0.7
100
80
60
20
0
0
20
40
60
80
100
120
140
160
Figure 6. Power Derating
TC, CASE TEMPERATURE (
C)
POWER DERA
TING F
ACT
OR (%)
THERMAL DERATING
SECOND BREAKDOWN DERATING
40
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4
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
100
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
5.0
50
30
20
1.4
Figure 8. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
1.0
0.6
0.4
0.2
0
TJ = 25
C
VBE(sat) @ IC/IB = 5.0
4.0
Figure 9. "On" Voltages
IB, BASE CURRENT (mA)
0
0.01
0.05 0.1
0.2
1.0
10
3.2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
70
h FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
-55
C
, COLLECT
OR CURRENT
(A)
I C
-0.2
-0.1
REVERSE
FORWARD
TJ = 25
C
IC = 1.0 A
2.0 A
V
,
VOL
T
AGE (VOL
TS)
+4.0
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+3.0
+1.0
0
-3.0
VB for VBE
*
VC for VCE(sat)
*APPLIES FOR IC/IB v
hFE @ VCE + 10 V
3
Figure 11. Collector Cutoff Region
VBE @ VCE = 10 V
1.2
0.8
0.02
0.5
2.4
1.6
0.8
+2.0
-1.0
-2.0
104
103
100
10-1
10-2
VCE = 10 V
10
7.0
0.05
0.1
0.2 0.3
1.0
0.07
0.7
0.5
2.0 3.0
5.0
3.0 A
5.0 A
2.0
5.0
VCE(sat) @ IC/IB = 5.0
IC/IB = 2.5
0.05
0.1
0.2 0.3
1.0
0.07
0.7
0.5
2.0 3.0 5.0
0.05
0.1
0.2 0.3
1.0
0.07
0.7
0.5
2.0 3.0
5.0
-55 to 25
C
-55
C to 25
C
25
C to 150
C
25
C to 150
C
25
C
100
C
VCE = 200 V
TJ = 150
C
102
101
0
+0.6
+0.4
+0.2
1000
0.4
VR, REVERSE VOLTAGE (VOLTS)
10
4.0 6.0 10
20
60
200 400
40
0.6 1.0 2.0
C, CAP
ACIT
ANCE (pF)
500
100
70
50
TJ = 25
C
Cib
Cob
Figure 12. Capacitance
700
200
300
30
20
100
2N6497
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5
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AA
TO220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2N6497
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6
Notes
2N6497
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7
Notes
2N6497
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