Semiconductor Components Industries, LLC, 2004
January, 2004 - Rev. 0
1
Publication Order Number:
DTA114EXV3T1/D
DTA114EXV3T1 Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base-emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SC-89 package which is designed for low power surface mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
Lead-Free Plating (Pure Sn)
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
DIGITAL
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
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SC-89
CASE 463C
STYLE 1
3
2
1
xx = Specific Device Code
(See Marking Table on page 2)
D = Date Code
MARKING DIAGRAM
xx D
1
3
2
DTA114EXV3T1 Series
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2
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
6A
6B
6C
6D
6E
6F
6P
6T
6R
10
22
47
10
10
4.7
47
47
4.7
10
22
47
47
22
10
3000/Tape & Reel
For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,
BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR-4 Board (Note 1) @ T
A
= 25
C
Derate above 25
C
P
D
200
1.6
mW
mW/
C
Thermal Resistance, Junction to Ambient (Note 1)
R
JA
600
C/W
Total Device Dissipation,
FR-4 Board (Note 2) @ T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient (Note 2)
R
JA
400
C/W
Junction and Storage Temperature Range
T
J
, T
stg
-55 to +150
C
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0
1.0 Inch Pad.
DTA114EXV3T1 Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
DTA114EXV3T1
(V
EB
= 6.0 V, I
C
= 0)
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
0.13
0.2
1.0
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
DTA114EXV3T1
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
h
FE
35
60
80
80
160
160
80
160
20
60
100
140
140
250
250
140
250
35
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5.0 mA) DTA123EXV3T1
(I
C
= 10 mA, I
B
= 1.0 mA) DTA114TXV3T1/ DTA143TXV3T1/
DTA143ZXV3T1/DTA124XXV3T1/DTA143EXV3T1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
DTA114EXV3T1
DTA124EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
DTA144EXV3T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
DTA114TXV3T1
DTA143TXV3T1
V
OH
4.9
-
-
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
DTA114EXV3T1 Series
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4
ELECTRICAL CHARACTERISTICS
(continued)
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Resistor
DTA114EXV3T1
DTA124EXV3T1
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1
DTA143TXV3T1
DTA144WXV3T1
DTA144TXV3T1
DTA143XXV3T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
32.9
32.9
3.3
10
22
47
10
10
4.7
47
47
4.7
13
28.6
61.1
13
13
6.1
61.1
61.1
6.1
k
Resistor Ratio
DTA114EXV3T1/DTA124EXV3T1/
DTA144EXV3T1
DTA114YXV3T1
DTA114TXV3T1/DTA143TXV3T1/
DTA144TXV3T1
DTA144WXV3T1
DTA143XXV3T1
R
1
/R
2
0.8
0.17
-
1.7
0.38
1.0
0.21
-
2.1
0.47
1.2
0.25
-
2.6
0.56
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA
= 600
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
DTA114EXV3T1 Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS - DTA114EXV3T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
25
C
1
2
3
4
5
6
7
8
9
10
Figure 4. DC Current Gain
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
Figure 7. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
-25
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= -25
C
25
C
75
C
75
C
I
C
/I
B
= 10
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
0
T
A
= -25
C
25
C
75
C
25
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
DTA114EXV3T1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS - DTA124EXV3T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
V
O
= 0.2 V
T
A
= -25
C
75
C
100
10
1
0.1
40
50
Figure 11. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 12. Input Voltage versus Output Current
0.01
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
75
C
25
C
T
A
= -25
C
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
25
C
I
C
/I
B
= 10
25
C
-25
C
V
CE
= 10 V
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
DTA114EXV3T1 Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS - DTA144EXV3T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
C
25
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 14. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
-25
C
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
10
25
C
V
in
, INPUT VOLTAGE (VOLTS)
-25
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
1
2
3
4
5
6
7
8
9
Figure 17. Input Voltage versus Output Current
100
10
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
T
A
= -25
C
25
C
75
C
50
I
C
/I
B
= 10
T
A
= -25
C
25
C
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
T
A
= 75
C
V
O
= 0.2 V
DTA114EXV3T1 Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS - DTA114YXV3T1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 19. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 22. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
C
25
C
T
A
= 75
C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2
4 6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
25
C
I
C
/I
B
= 10
T
A
= -25
C
T
A
= 75
C
25
C
-25
C
V
O
= 5 V
V
O
= 0.2 V
25
C
T
A
= -25
C
75
C
75
C
DTA114EXV3T1 Series
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9
TYPICAL ELECTRICAL CHARACTERISTICS -- DTA144WXV3T1
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
0.01
1000
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
11
9
8
7
100
15
10
5
0
1
10
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
50
45
40
0.1
0.01
10
1.2
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
75
C
25
C
T
A
= -25
C
V
O
= 0.2 V
75
C
25
C
T
A
= -25
C
I
C
/I
B
= 10
V
CE
= 10 V
75
C
25
C
T
A
= -25
C
LOAD
+12 V
Figure 28. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
DTA114EXV3T1 Series
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10
PACKAGE DIMENSIONS
SC-89
CASE 463C-03
ISSUE C
G
M
0.08 (0.003)
X
D
3 PL
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
A
B
Y
1
2
3
N
2 PL
K
C
-T-
SEATING
PLANE
DIM
A
MIN
NOM
MIN
NOM
INCHES
1.50
1.60
1.70
0.059
MILLIMETERS
B
0.75
0.85
0.95
0.030
C
0.60
0.70
0.80
0.024
D
0.23
0.28
0.33
0.009
G
0.50 BSC
H
0.53 REF
J
0.10
0.15
0.20
0.004
K
0.30
0.40
0.50
0.012
L
1.10 REF
M
---
---
10
---
N
---
---
10
---
S
1.50
1.60
1.70
0.059
0.063
0.067
0.034
0.040
0.028
0.031
0.011
0.013
0.020 BSC
0.021 REF
0.006
0.008
0.016
0.020
0.043 REF
---
10
---
10
0.063
0.067
MAX
MAX
_
_
_
_
M
S
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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DTA114EXV3T1/D
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