Publication Order Number:
NTF3055160/D
Semiconductor Components Industries, LLC, 2001
July, 2001 Rev. 0
1
NTF3055-160
Preferred Device
Power MOSFET
2.0 Amps, 60 Volts
NChannel SOT223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M
)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (tp
10 ms)
VGS
20
30
Vdc
Vpk
Drain Current
Continuous @ TA = 25
C
Continuous @ TA = 100
C
Single Pulse (tp
10
s)
ID
ID
IDM
2.0
1.2
6.0
Adc
Apk
Total Power Dissipation @ TA = 25
C (Note 1.)
Total Power Dissipation @ TA = 25
C (Note 2.)
Derate above 25
C
PD
2.1
1.3
0.014
W
W
W/
C
Operating and Storage Temperature Range
TJ, Tstg
55 to
175
C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25
C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 6.0 Apk, L = 10 mH, VDS = 60 Vdc)
EAS
65
mJ
Thermal Resistance
Junction to Ambient (Note 1.)
Junction to Ambient (Note 2.)
R
JA
R
JA
72.3
114
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
TL
260
C
1. When surface mounted to an FR4 board using 1
pad size,
(Cu. Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 22.4 oz. (Cu. Area 0.272 in2).
D
G
S
1
2
3
4
2.0 AMPERES
60 VOLTS
RDS(on) = 160 m
W
NChannel
Device
Package
Shipping
ORDERING INFORMATION
NTF3055160T1
SOT223
1000 Tape & Reel
SOT223
CASE 318E
STYLE 3
http://onsemi.com
MARKING
DIAGRAM
5160
5160
= Device Code
L
= Location Code
WW
= Work Week
PIN ASSIGNMENT
3
2
1
4
Gate
Drain Source
Drain
NTF3055160T3
SOT223
4000 Tape & Reel
NTF3055160T3LF
SOT223
4000 Tape & Reel
LWW
NTF3055160
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2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 3.)
(VGS = 0 Vdc, ID = 250
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
72
72
Vdc
mV/
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
C)
IDSS
1.0
10
Adc
GateBody Leakage Current
(VGS =
20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS
(Note 3.)
Gate Threshold Voltage
(Note 3.)
(VDS = VGS, ID = 250
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.1
6.6
4.0
Vdc
mV/
C
Static DraintoSource OnResistance
(Note 3.)
(VGS = 10 Vdc, ID = 1.0 Adc)
RDS(on)
142
160
m
Static DraintoSource OnResistance
(Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150
C)
VDS(on)
0.142
0.270
0.384
Vdc
Forward Transconductance
(Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
gfs
1.8
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 V
Ciss
200
280
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Coss
68
100
Transfer Capacitance
f = 1.0 MHz)
Crss
26
40
SWITCHING CHARACTERISTICS
(Note 4.)
TurnOn Delay Time
td(on)
9.2
20
ns
Rise Time
(VDD = 30 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc
tr
9.2
20
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1
) (Note 3.)
td(off)
16
40
Fall Time
RG 9.1
) (Note 3.)
tf
9.2
20
Gate Charge
(V
48 Vd
I
2 0 Ad
QT
6.9
14
nC
(VDS = 48 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc) (Note 3.)
Q1
1.4
VGS = 10 Vdc) (Note 3.)
Q2
3.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150
C) (Note 3.)
VSD
0.86
0.70
1.0
Vdc
Reverse Recovery Time
trr
28.9
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
ta
19.1
(IS 2.0 Adc, VGS 0 Vdc,
dIS/dt = 100 A/
s) (Note 3.)
tb
9.8
Reverse Recovery Stored Charge
QRR
0.030
C
3. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
NTF3055160
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3
0
0.5
2
3.5
2.5
1.5
1
3
4
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus
GatetoSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
versus Voltage
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D,
DRAIN CURRENT (AMPS)
TJ = 25
C
TJ = 100
C
TJ = 55
C
0
0.28
0.24
0.2
0.16
0.12
0
0.5
2
3.5
ID, DRAIN CURRENT (AMPS)
R
DS(on),
DRAINT
OSOURCE RESIST
ANCE (
)
ID, DRAIN CURRENT (AMPS)
R
DS(on),
DRAINT
OSOURCE RESIST
ANCE (
)
VGS = 15 V
2
1.8
1.6
1.4
TJ, JUNCTION TEMPERATURE (
C)
R
DS(on),
DRAINT
OSOURCE RESIST
ANCE (NORMALIZED)
50
50
25
0
25
75
125
100
ID = 1 A
VGS = 10 V
0.8
0.6
150
1
10
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
, LEAKAGE (nA)
0
40
60
30
20
10
50
100
2.5
1.5
0
0.8
2
2.8
1.6
0.8
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I D,
DRAIN CURRENT (AMPS)
0
0.4
3.6
VGS = 10 V
VGS = 4.5 V
VGS = 8 V
VGS = 10 V
VGS = 5 V
1.6
0.4
1.2
2
3
6.2
3.8
5.4
3.4
4.2
4.6
5
5.8
0.08
0.04
1
VGS, GATETOSOURCE VOLTAGE (VOLTS)
1.2
1.2
0.8
2
0
2.8
1.6
0.4
1.2
0.28
0.24
0.2
0.16
0.12
0
0.08
0.04
1
175
VGS = 5.5 V
TJ = 150
C
TJ = 100
C
TJ = 25
C
TJ = 25
C
TJ = 100
C
TJ = 55
C
VDS
10 V
VGS = 0 V
2.4
2.4
3.2
2.8
VGS = 7 V
VGS = 6 V
2.4
3
TJ = 125
C
4
NTF3055160
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4
10
10
15
5
0
20
5
25
RDS(on) LIMIT
VGS
100
10
1
0.001
100
10
1
12
10
8
6
4
2
0
50
20
10
0
2
1.6
0
480
400
240
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
C, CAP
ACIT
ANCE (pF)
160
80
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
GS
, GA
TET
OSOURCE VOL
T
AGE (VOL
TS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
RG, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage versus Current
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
I S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (
C)
I D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAINT
OSOURCE
A
V
ALANCHE ENERGY (mJ)
0
5
7
6
4
2
8
1
10
100
0.6
0.68
0.64
0.8
0.1
10
100
1
25
125
150
100
75
175
50
ID = 2 A
TJ = 25
C
VGS
VGS = 0 V
VDS = 0 V
TJ = 25
C
Crss
Ciss
Coss
Crss
1.2
0.72
0.76
Ciss
VGS = 20 V
SINGLE PULSE
TC = 25
C
VDS = 30 V
ID = 2 A
VGS = 10 V
VGS = 0 V
TJ = 25
C
ID = 6 A
1 ms
10
s
10 ms
dc
tr
td(off)
td(on)
VDS
0.88
0.1
30
40
Q2
Q1
QT
60
70
0
3
1
0.8
0.4
tf
THERMAL LIMIT
PACKAGE LIMIT
320
560
0.84
0.01
100
s
NTF3055160
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5
100
0.1
100
10
1
0.1
0.001
1000
r(t), EFFECTIVE TRANSIENT THERMAL
RESIST
ANCE (NORMALIZED)
t, TIME (s)
Figure 13. Thermal Response
10
1
0.01
0.0001
0.00001
MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
NTF3055160
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6
PACKAGE DIMENSIONS
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
H
S
F
A
B
D
G
L
4
1
2
3
0.08 (0003)
C
M
K
J
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.249
0.263
6.30
6.70
INCHES
B
0.130
0.145
3.30
3.70
C
0.060
0.068
1.50
1.75
D
0.024
0.035
0.60
0.89
F
0.115
0.126
2.90
3.20
G
0.087
0.094
2.20
2.40
H 0.0008 0.0040
0.020
0.100
J
0.009
0.014
0.24
0.35
K
0.060
0.078
1.50
2.00
L
0.033
0.041
0.85
1.05
M
0
10
0
10
S
0.264
0.287
6.70
7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
_
_
_
_
SOT223 (TO261)
CASE 318E04
ISSUE K
NTF3055160
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7
Notes
NTF3055160
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8
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NTF3055160/D
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