Semiconductor Components Industries, LLC, 2005
September, 2005 - Rev. 2
1
Publication Order Number:
NTMFS4122N/D
NTMFS4122N
Power MOSFET
30 V, 23 A, Single N-Channel,
SO-8 Flat Lead
Features
Low R
DS(on)
Low Inductance SO-8 Package
This is a Pb-Free Device
Applications
Notebooks, Graphics Cards
DC-DC Converters
Synchronous Rectification
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
$
20
V
Continuous Drain Current
(Note 1 )
Steady
State
T
A
= 25
C
I
D
14
A
T
A
= 85
C
10
t
v
10 s
T
A
= 25
C
23
Power Dissipation (Note 1)
Steady
State
T
A
= 25
C
P
D
2.2
W
t
v
10 s
5.8
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25
C
I
D
9.1
A
T
A
= 85
C
6.5
Power Dissipation (Note 2)
T
A
= 25
C
P
D
0.9
W
Pulsed Drain Current
t
p
= 10
m
s
I
DM
68
A
Operating Junction and Storage Temperature
T
J
, T
stg
-55 to
150
C
Source Current (Body Diode)
I
S
7.0
A
Single Pulse Drain-to-Source Avalanche Energy
(V
DD
= 75 V, V
GS
= 10 V, I
PK
= 21 A, L = 1 mH,
R
G
= 25
W
)
E
AS
220
mJ
Lead Temperature for Soldering Purposes
(1/8
from case for 10 s)
T
L
260
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Ambient - Steady State (Note 1)
R
q
JA
56.3
C/W
Junction-to-Ambient - t
v
10 s (Note 1)
R
q
JA
21.5
Junction-to-Ambient - Steady State (Note 2)
R
q
JA
141.6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0264 in sq).
G
D
S
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
4122N = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
1
MARKING
DIAGRAM
4122N
AYWW
G
G
S
S
S
G
D
D
D
D
http://onsemi.com
30 V
6.3 m
W
@ 4.5 V
4.6 m
W
@ 10 V
R
DS(on)
TYP
23 A
I
D
MAX
(Note 1)
V
(BR)DSS
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4122NT1G
SO-8 FL
(Pb-Free)
1500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMFS4122NT3G
SO-8 FL
(Pb-Free)
5000 Tape & Reel
NTMFS4122N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
23
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25
C
1.0
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.0
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
6.6
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 14 A
4.6
6.0
m
W
V
GS
= 4.5 V, I
D
= 12 A
6.3
8.5
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 10 A
13.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 24 V
2310
pF
Output Capacitance
C
OSS
460
Reverse Transfer Capacitance
C
RSS
263
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 12 A
20
30
nC
Threshold Gate Charge
Q
G(TH)
3.0
Gate-to-Source Charge
Q
GS
6.7
Gate-to-Drain Charge
Q
GD
8.1
Gate Resistance
R
G
2.0
W
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 1.0 A, R
L
= 15
W
, R
G
= 3.0
W
20
ns
Rise Time
t
r
20
Turn-Off Delay Time
t
d(OFF)
30
Fall Time
t
f
31
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 7.0 A
T
J
= 25
C
0.75
1.0
V
T
J
= 125
C
0.6
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/
m
s,
I
S
= 7.0 A
28
ns
Charge Time
t
a
14
Discharge Time
t
b
14
Reverse Recovery Charge
Q
RR
23
nC
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4122N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125
C
0
14
0.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
12
0
Figure 1. On-Region Characteristics
3
16
14
0
Figure 2. Transfer Characteristics
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Drain Current
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
-50
0
-25
25
1.4
1.8
1
0.8
0.6
50
150
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
T
J
= 25
C
T
J
= -55
C
75
T
J
= 25
C
I
D
= 14 A
V
GS
= 10 V
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (NORMALIZED)
T
J
= 25
C
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
V
GS
= 10 V
10
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
24
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150
C
T
J
= 100
C
3.1 V
2.8 V
V
GS
= 4.5 V
V
DS
= 30 V
12
27
2.6 V
12
4
30
16
V
GS
= 3.4 V to 10 V
18
125
100
5
4
0.006
I
D,
DRAIN CURRENT (AMPS)
0.001
T
J
= 25
C
V
GS
= 10 V
0.003
0.004
0.007
2
8
10
0
T
J
= 125
C
T
J
= -55
C
6
0.006
0.003
0.007
0.002
0.004
0.005
100
3
20
2
3
20
2
10
30
5
20
25
15
1.2
18
18
1
2.5
10000
3.0 V
3.3 V
0.005
22
24
24
22
1
0.008
0.002
0.008
1000
1.6
1.3
1.7
0.9
0.7
1.1
1.5
21
15
6
9
1.5
10
8
6
4
2
3.2 V
10
8
6
4
2
NTMFS4122N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
Figure 8. Gate-To-Source and
Drain-To-Source Voltage vs. Total Charge
1.0
0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25
C
Figure 10. Diode Forward Voltage vs. Current
0.8
0.6
4
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.1
1
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
10
0.01
dc
1
100
10
10 ms
1 ms
100 ms
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
G
, GATE RESISTANCE (OHMS)
1
10
100
100
10
t, TIME
(ns)
V
DD
= 15 V
I
D
= 1 A
V
GS
= 4.5 V
t
r
t
d(on)
1000
t
f
t
d(off)
2
10 ms
6
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
5
10
15
I
D
= 12 A
T
J
= 25
C
V
GS
Q
GS
Q
GD
QT
2
1
C, CAP
ACIT
ANCE (pF)
1000
0
5
10
C
iss
C
oss
C
rss
15
20
0
2000
3000
500
25
V
GS
= 0 V
T
J
= 25
C
25
20
0.4
8
100
1500
2500
0.9
25
V
DS
, DRAIN-T
O-SOURCE VOL
T
AGE (VOL
TS)
12
0
20
16
8
4
V
DS
0.7
0.5
NTMFS4122N
http://onsemi.com
5
PACKAGE DIMENSIONS
SO-8 FLAT LEAD
CASE 488AA-01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1
2
3
4
5
6
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM
MIN
NOM
MILLIMETERS
A
0.90
0.99
A1
0.00
---
b
0.33
0.41
c
0.23
0.28
D
5.15 BSC
D1
4.50
4.90
D2
3.50
---
E
6.15 BSC
E1
5.50
5.80
E2
3.45
---
e
1.27 BSC
G
0.51
0.61
K
0.51
---
L
0.51
0.61
L1
0.05
0.17
q
0
---
A
0.10 C
0.10 C
DETAIL A
_
1
4
6
L1
e/2
6 X
D2
G
E2
K
b
A
0.10
B
C
0.05
c
L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
5
MAX
1.20
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
---
0.71
0.20
12
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
NTMFS4122N
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
NTMFS4122N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082-1312 USA
Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada
Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
PDF 
ZIP