Semiconductor Components Industries, LLC, 2006
July, 2006 - Rev. 1
1
Publication Order Number:
NTMFS4839N/D
NTMFS4839N
Power MOSFET
30 V, 66 A, Single N-Channel, SO-8FL
Features
Low R
DS(ON)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25
C
I
D
15
A
T
A
= 85
C
11
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25
C
P
D
2.17
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25
C
ID
9.5
A
T
A
= 85
C
7.0
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25
C
P
D
0.87
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25
C
I
D
66
A
T
C
= 85
C
48
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25
C
P
D
41.7
W
Pulsed Drain
Current
T
A
= 25
C,
t
p
= 10
m
s
I
DM
132
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+150
C
Source Current (Body Diode)
I
S
35
A
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy T
J
= 25
C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 19 A
pk
, L = 1.0 mH, R
G
= 25
W
EAS
180.5
mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
4839N
AYWW
G
G
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
5.5 m
W
@ 10 V
66 A
9.5 m
W
@ 4.5 V
G (4)
S (1,2,3)
N-CHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4839NT1G
SO-8FL
(Pb-Free)
1500 /
Tape & Reel
NTMFS4839NT3G
SO-8FL
(Pb-Free)
5000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4839N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
q
JC
3.0
C/W
Junction-to-Ambient Steady State (Note 3)
R
q
JA
57.7
Junction-to-Ambient Steady State (Note )
R
q
JA
143.4
3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
C
1
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.8
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
4.5
5.5
m
W
I
D
= 15 A
4.5
V
GS
= 4.5 V
I
D
= 30 A
8.4
9.5
I
D
= 15 A
8.4
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
14.7
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1588
pF
Output Capacitance
C
OSS
352
Reverse Transfer Capacitance
C
RSS
196
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
13
18
nC
Threshold Gate Charge
Q
G(TH)
1.6
Gate-to-Source Charge
Q
GS
4.8
Gate-to-Drain Charge
Q
GD
5.8
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
28
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
12
ns
Rise Time
t
r
29
Turn-Off Delay Time
t
d(OFF)
18
Fall Time
t
f
7.0
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.0
ns
Rise Time
t
r
21
Turn-Off Delay Time
t
d(OFF)
24
Fall Time
t
f
7.0
5. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4839N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25
C
0.9
1.2
V
T
J
= 125
C
0.8
Reverse Recovery Time
t
RR
V
GS
= 0 V, dIS/dt = 100 A/
m
s,
I
S
= 30 A
22.2
ns
Charge Time
t
a
12.5
Discharge Time
t
b
9.7
Reverse Recovery Charge
Q
RR
10.8
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25
C
0.93
nH
Drain Inductance
L
D
0.005
nH
Gate Inductance
L
G
1.84
nH
Gate Resistance
R
G
3.3
W
5. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
V
GS
= 3.0 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.5 V
4.0 V
4.2 V
4.4 V
4.6 V
6.0 V
T
J
= 25
C
0
10
20
30
40
50
60
70
80
90
1
2
3
4
5
6
I
D
, DRAIN CURRENT (A)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T
C
= 25
C
T
C
= -55
C
T
C
= 125
C
0.004
0.006
0.008
0.01
0.012
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5 11.5
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Resistance versus
Gate-to-Source Voltage
I
D
= 30 A
T
J
= 25
C
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
10
15
20
25
30
35
40
V
GS
= 11.5 V
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
Figure 4. On-Resistance versus Drain Current
and Temperature
R
DS(on)
,
DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
NTMFS4839N
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4
Figure 5. On-Resistance Variation with
Temperature
10
100
1000
10000
100000
4
8
12
16
20
24
28
Figure 6. Drain-to-Source Leakage Current
versus Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
SS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150
C
T
J
= 125
C
1.40
0.60
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
-50
25
0
-25
50
75
125
I
D
= 30 A
V
GS
= 10 V & 4.5 V
100
1.00
150
0.80
1.60
1.80
1.20
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-15
-10
-5
0
5
10
15
20
25
30
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAP
ACIT
ANCE
(pF)
C
ISS
C
OSS
C
RSS
T
J
= 25
C
C
ISS
C
RSS
V
GS
V
DS
0
2
4
6
8
10
12
0
2.5
5
7.5 10 12.5 15 17.5 20 22.5 25 27.5 30
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Q
GD
Q
GS
Q
T
V
DS
V
GS
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GA
TE-T
O-SOURCE
VOL
T
AGE
(V)
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge
V
DS,
DRAIN-T
O-SOURCE
VOL
T
AGE
(V)
I
D
= 30 A
T
J
= 25
C
NTMFS4839N
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5
1
10
100
1000
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DS
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (
W
)
t, TIME (ns)
0
5
10
15
20
25
30
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
T
J
= 25
C
0.1
1
10
100
1000
0.1
1
10
100
100
m
s
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20 V
Single Pulse
T
C
= 25
C
10
m
s
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
25
50
75
100
125
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
EAS, SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
I
D
= 19 A
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