Semiconductor Components Industries, LLC, 2003
January, 2003 - Rev. 2
1
Publication Order Number:
NTP60N06L/D
NTP60N06L, NTB60N06L
Power MOSFET
60 Amps, 60 Volts, Logic Level
N-Channel TO-220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
60
Vdc
Drain-to-Gate Voltage (R
GS
= 10 M
)
V
DGR
60
Vdc
Gate-to-Source Voltage
- Continuous
- Non-Repetitive (t
p
v
10 ms)
V
GS
V
GS
"
15
"
20
Vdc
Drain Current
- Continuous @ T
A
= 25
C
- Continuous @ T
A
100
C
- Single Pulse (t
p
v
10
s)
I
D
I
D
I
DM
60
42.3
180
Adc
Apk
Total Power Dissipation @ T
A
= 25
C
Derate above 25
C
Total Power Dissipation @ T
A
= 25
C (Note 1)
P
D
150
1.0
2.4
W
W/
C
W
Operating and Storage Temperature Range
T
J
, T
stg
- 55 to
175
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 75 Vdc, V
GS
= 5.0 Vdc,
L = 0.3 mH, I
L
(pk) = 55 A,V
DS
= 60 Vdc)
E
AS
454
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
R
JC
R
JA
1.0
62.5
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
60 AMPERES
60 VOLTS
R
DS(on)
= 16 m
Device
Package
Shipping
ORDERING INFORMATION
NTP60N06L
TO-220AB
50 Units/Rail
TO-220AB
CASE 221A
STYLE 5
1
2
3
4
N-Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
x
= P or B
NTx60N06L = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTx60N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx60N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
NTB60N06L
D
2
PAK
50 Units/Rail
NTB60N06LT4
D
2
PAK
800/Tape & Reel
http://onsemi.com
NTP60N06L, NTB60N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
-
72.8
75.2
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
=150
C)
I
DSS
-
-
-
-
1.0
10
Adc
Gate-Body Leakage Current (V
GS
=
15
Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.58
5.4
2.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 30 Adc)
R
DS(on)
-
12.4
16
m
Static Drain-to-Source On-Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 60 Adc)
(V
GS
= 5.0 Vdc, I
D
= 30 Adc, T
J
= 150
C)
V
DS(on)
-
-
0.793
0.861
1.17
-
Vdc
Forward Transconductance (Note 2) (V
DS
= 8.0 Vdc, I
D
= 12 Adc)
g
FS
-
48
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
C
iss
-
2195
3075
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
-
675
945
Transfer Capacitance
f = 1.0 MHz)
C
rss
-
188
380
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t
d(on)
-
50.4
100
ns
Rise Time
(V
DD
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 5 0 Vdc
t
r
-
576
1160
Turn-Of f Delay Time
V
GS
= 5.0 Vdc,
R
G
= 9.1
) (Note 2)
t
d(off)
-
100
200
Fall Time
R
G
9.1
) (Note 2)
t
f
-
237
480
Gate Charge
(V
48 Vd
I
60 Ad
Q
T
-
43.2
65
nC
(V
DS
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 5.0 Vdc) (Note 2)
Q
1
-
6.4
-
V
GS
= 5.0 Vdc) (Note 2)
Q
2
-
29
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 60 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 60 Adc, V
GS
= 0 Vdc, T
J
= 150
C)
V
SD
-
-
0.98
0.86
1.05
-
Vdc
Reverse Recovery Time
(I
60 Ad
V
0 Vd
t
rr
-
81.9
-
ns
(I
S
= 60 Adc, V
GS
= 0 Vdc,
dl
S
/dt = 100 A/
s) (Note 2)
t
a
-
42.1
-
dl
S
/dt = 100 A/
s) (Note 2)
t
b
-
39.8
-
Reverse Recovery Stored Charge
Q
RR
-
0.172
-
C
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
3. Switching characteristics are independent of operating junction temperature.
NTP60N06L, NTB60N06L
http://onsemi.com
3
0.03
0.022
0.018
0.01
40
20
0
0.006
120
60
0.014
V
DS
= 5 V
80
100
0.026
0
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
GS
= 10 V
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
Figure 1. On-Region Characteristics
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
120
60
40
20
5
3
2
1
0
Figure 2. Transfer Characteristics
V
GS
, GATE-T O-SOURCE VOLTAGE (VOLTS)
6
4
3
2
1
120
60
40
20
0
0
Figure 3. On-Resistance versus Gate-to-Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
0.03
0.022
0.018
0.01
40
20
0
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
0.006
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
2
1.8
1.6
1.4
1.2
1
0.8
175
125
100
75
50
25
0
-25
-50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
0
1000
100
10
0.6
10,000
Figure 6. Drain-to-Source Leakage Current
versus Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(
W
)
120
60
0.014
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(
W
)
R
DS(on),
DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
20
60
4
30
40
50
3 V
3.5 V
4 V
8 V
6 V
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
GS
= 5 V
I
D
= 30 A
V
GS
= 5 V
T
J
= 150
C
V
GS
= 0 V
T
J
= 100
C
80
100
80
100
5
80
100
150
T
J
= 125
C
4.5 V
5 V
0.026
NTP60N06L, NTB60N06L
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4
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (
t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain-gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I
G(AV)
) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I
G(AV)
During the rise and fall time interval when switching a
resistive load, V
GS
remains virtually constant at a level
known as the plateau voltage, V
SGP
. Therefore, rise and fall
times may be approximated by the following:
t
r
= Q
2
x R
G
/(V
GG
- V
GSP
)
t
f
= Q
2
x R
G
/V
GSP
where
V
GG
= the gate drive voltage, which varies from zero to V
GG
R
G
= the gate drive resistance
and Q
2
and V
GSP
are read from the gate charge curve.
During the turn-on and turn-off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t
d(on)
= R
G
C
iss
In [V
GG
/(V
GG
- V
GSP
)]
t
d(off)
= R
G
C
iss
In (V
GG
/V
GSP
)
The capacitance (C
iss
) is read from the capacitance curve at
a voltage corresponding to the off-state condition when
calculating t
d(on)
and is read at a voltage corresponding to the
on-state when calculating t
d(off)
.
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
10
2000
4000
6000
8000
C, CAP
ACIT
ANCE (pF)
5
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V
GS
V
DS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
rss
C
iss
C
oss
C
rss
C
iss
0
5
10
15
25
20
0
NTP60N06L, NTB60N06L
http://onsemi.com
5
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
V
GS
, GA
TE-T
O-SOURCE
VOL
T
AGE (VOL
TS)
60
0
0.86
0.3
DRAIN-T O-SOURCE DIODE CHARACTERISTICS
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 8. Gate-to-Source and Drain-to-Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (
)
1
10
100
1000
10
V
DS
= 30 V
I
D
= 60 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
C
Figure 10. Diode Forward Voltage versus Current
0
5
3
1
0
Q
G
, TOTAL GATE CHARGE (nC)
6
4
2
20
50
40
100
10
30
0.38
0.46
0.54
0.62
0.7
0.78
20
30
50
10
40
I
D
= 60 A
T
J
= 25
C
V
GS
Q
2
Q
1
Q
T
t
r
t
d(off)
t
d(on)
t
f
T
J
= 150
C
T
J
= 25
C
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain-to-source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
C
) of 25
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, "Transient Thermal Resistance -
General Data and Its Use."
Switching between the off-state and the on-state may
traverse any load line provided neither rated peak current
(I
DM
) nor rated voltage (V
DSS
) is exceeded and the
transition time (t
r
,t
f
) do not exceed 10
s. In addition the total
power averaged over a complete switching cycle must not
exceed (T
J(MAX)
- T
C
)/(R
JC
).
A Power MOSFET designated E-FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non-linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E- FETs can withstand the stress of
drain- to- source avalanche at currents up to rated pulsed
current (I
DM
), the energy rating is specified at rated
continuous current (I
D
), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I
D
can safely be assumed to
equal the values indicated.
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