Semiconductor Components Industries, LLC, 2004
August, 2004 - Rev. 6
1
Publication Order Number:
NTP75N03L09/D
NTP75N03L09,
NTB75N03L09
Power MOSFET
75 Amps, 30 Volts, N-Channel
TO-220 and D
2
PAK
This Logic Level Vertical Power MOSFET is a general purpose part
that provides the "best of design" available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain-to-source diode has a ideal fast but soft recovery.
Features
Pb-Free Packages are Available
Ultra-Low R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Specified
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP75N03HDL and MTB75N03HDL in Many
Applications
D
G
N-Channel
S
75 AMPERES, 30 VOLTS
R
DS(on)
= 8 m
W
TO-220
CASE 221A
STYLE 5
1
2
3
4
75N03L09
= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
75N
03L09
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N03L09
AYWW
1
Gate
3
Source
4
Drain
2
Drain
D
2
PAK
CASE 418AA
STYLE 2
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
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NTP75N03L09, NTB75N03L09
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
Vdc
Drain-to-Gate Voltage
(RGS = 10 M
W
)
V
DGB
30
Vdc
Gate-to-Source Voltage - Continuous
V
GS
20
Vdc
Non-repetitive (tp
10 ms)
V
GS
24
Vdc
Drain Current
- Continuous @ T
C
= 25
C
- Continuous @ T
C
= 100
C
- Single Pulse (tp
10
m
s)
I
D
I
D
I
DM
75
59
225
Adc
Apk
Total Power Dissipation @ T
C
= 25
C
Derate above 25
C
Total Power Dissipation @ T
A
= 25
C (Note 1)
P
D
125
1.0
2.5
W
W/
C
W
Operating and Storage Temperature Range
T
J
and T
stg
-55 to 150
C
Single Pulse Drain-to-Source Avalanche Energy - Starting T
J
= 25
C
(V
DD
= 38 Vdc, V
GS
= 10 Vdc, L = 1 mH, I
L
(pk) = 55 A, V
DS
= 40 Vdc)
E
AS
1500
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient
- Junction-to-Ambient (Note 1)
R
q
JC
R
q
JA
R
q
JA
1.0
62.5
50
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
T
L
260
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device
Package
Shipping
NTP75N03L09
TO-220
50 Units/Rail
NTP75N03L09G
TO-220
(Pb-Free)
50 Units/Rail
NTB75N03L09
D
2
PAK
50 Units/Rail
NTB75N03L09G
D
2
PAK
(Pb-Free)
50 Units/Rail
NTB75N03L09T4
D
2
PAK
800 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTP75N03L09, NTB75N03L09
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250
m
Adc)
Temperature Coefficient (Negative)
V
(BR)DSS
30
34
-57
-
-
Vdc
mV
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 150
C)
I
DSS
-
-
-
-
1.0
10
m
Adc
Gate-Body Leakage Current
(V
GS
=
20 Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250
m
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.6
-6
2.0
-
Vdc
mV
C
Static Drain-to-Source On-Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 37.5 Adc)
R
DS(on)
-
6.5
8.0
m
W
Static Drain-to-Source On Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 125
C)
V
DS(on)
-
-
0.52
0.35
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4)
(V
DS
= 3 Vdc, I
D
= 20 Adc)
g
FS
-
58
-
m
W
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
(V
25 Vdc V
0
C
iss
-
4398
5635
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
oss
-
1160
1894
Transfer Capacitance
f 1.0 MHz)
C
rss
-
317
430
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn-On Delay Time
(V
5 0 Vdc
t
d(on)
-
16
30
ns
Rise Time
(V
GS
= 5.0 Vdc,
V
DD
= 20 Vdc, I
D
= 75 Adc,
) (
)
t
r
-
130
200
Turn-Off Delay Time
V
DD
20 Vdc, I
D
75 Adc,
R
G
= 4.7
W
) (Note 2)
t
d(off)
-
65
110
Fall Time
t
f
-
105
175
Gate Charge
(V
GS
= 5.0 Vdc,
I
75 Adc
Q
T
-
57
75
nC
I
D
= 75 Adc,
V
DS
= 24 Vdc) (Note 2)
Q
1
-
11
15
V
DS
24 Vdc) (Note 2)
Q
2
-
34
50
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 75 Adc, V
GS
= 0 Vdc)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 125
C)
(Note 2)
V
SD
-
-
1.19
1.09
1.25
-
Vdc
Reverse Recovery Time
(Note 4)
(I
75 Adc V
0 Vdc
t
rr
-
37
-
ns
(Note 4)
(I
S
= 75 Adc, V
GS
= 0 Vdc
dl
S
/dt = 100 A/
m
s) (Note 2)
t
a
-
20
-
Reverse Recovery Stored
Charge (Note 4)
dl
S
/dt 100 A/
m
s) (Note 2)
t
b
-
17
-
m
C
Charge (Note 4)
Q
RR
-
0.023
-
2. Pulse Test: Pulse Width
v
300
m
S, Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.
NTP75N03L09, NTB75N03L09
http://onsemi.com
4
V
GS
= 4 V
1.6
1.4
1
1.2
0.8
0.6
1
100
1000
120
90
135
75
105
0
150
0.006
0
90
2.6
60
0.4
0.2
I
D
, DRAIN CURRENT (AMPS)
30
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
10
0.0085
0.008
0.0075
0.007
50
40
30
0.0065
0.006
0.0055
0.005
0.004
20
60
70
120
Figure 3. On-Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O SOURCE RESIST
ANCE (
W
)
R
DS(on)
, DRAIN-T
O SOURCE RESIST
ANCE (
W
)
Figure 5. On-Resistance Variation Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current vs.
Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O SOURCE RESIST
ANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
120
-50
50
25
0
-25
75
125
150
0.5
2.5
3
2
1.5
3.5
1
4
0
80
60
40
100
20
120
0.007
0.005
0.004
0.008
0.009
5
15
20
25
10
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
0.6 0.8 1
1.2 1.4 1.6 1.8
2
2.2 2.4
60
45
30
15
0.0045
80
90 100
10
100
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 2.5 V
T
J
= 25
C
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 100
C
V
GS
= 5 V
V
GS
= 5 V
T
J
= 25
C
V
GS
= 10 V
V
GS
= 0 V
V
GS
= 5.0 V
I
D
= 37.5 A
T
J
= 125
C
T
J
= 100
C
V
GS
= 3.5 V
NTP75N03L09, NTB75N03L09
http://onsemi.com
5
1600
1000
600
800
400
200
0
20
10
10000
25
6000
6
8
C, CAP
ACIT
ANCE (pF)
2000
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
1
1000
9.1
6.2
4.7
100
10
2.2
10
20
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (
W
)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
E
AS
, SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
12000
25
75
50
100
125
150
0.0
0.8
0.6
0.4
0.2
1.0
10
25
5
15
0
30
75
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (VOLTS)
0
4000
8000
4
2
0 2
4
6 8 10 12 14 16 18 20 22
40
45
50
55
60
65
70
35
1400
1200
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25
C
C
rss
C
oss
C
iss
V
DD
= 15 V
V
GS
= 5 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25
C
I
D
= 75 A
T
J
= 25
C
I
D
= 75 A
V
GS
V
DS
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
0
10
20
30
40
50
60
0
0
2
4
6
8
10
10
20
30
I
D
= 75 A
T
J
= 25
C
V
GS
Q
2
Q
1
Q
T
Q
3
V
DS
NTP75N03L09, NTB75N03L09
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6
PACKAGE DIMENSIONS
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
TO-220
CASE 221A-09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
-T-
C
S
T
U
R
J
NTP75N03L09, NTB75N03L09
http://onsemi.com
7
PACKAGE DIMENSIONS
D
2
PAK
CASE 418AA-01
ISSUE O
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
mm
inches
SCALE 3:1
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SEATING
PLANE
S
G
D
-T-
M
0.13 (0.005)
T
2
3
1
4
3 PL
K
J
V
E
C
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.340
0.380
8.64
9.65
B
0.380
0.405
9.65
10.29
C
0.160
0.190
4.06
4.83
D
0.020
0.036
0.51
0.92
E
0.045
0.055
1.14
1.40
G
0.100 BSC
2.54 BSC
J
0.018
0.025
0.46
0.64
K
0.090
0.110
2.29
2.79
S
0.575
0.625
14.60
15.88
V
0.045
0.055
1.14
1.40
-B-
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
0.310
---
7.87
---
M
0.280
---
7.11
---
NTP75N03L09, NTB75N03L09
http://onsemi.com
8
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTP75N03L09/D
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