Semiconductor Components Industries, LLC, 2004
September, 2004 - Rev. 1
1
Publication Order Number:
NTS4101P/D
NTS4101P
Power MOSFET
-20 V, -1.37 A, Single P-Channel, SC-70
Features
Leading -20 V Trench for Low R
DS(on)
-2.5 V Rated for Low Voltage Gate Drive
SC-70 Surface Mount for Small Footprint (2x2 mm)
Pb-Free Package is Available
Applications
High Side Load Switch
Charging Circuit
Single Cell Battery Applications such as; Cell Phones,
Digital Cameras, PDAs
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
V
DSS
-20
V
Gate-to-Source Voltage
V
GS
8
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
C
I
D
-1.37
A
Current (Note 1)
State
T
A
= 70
C
-0.62
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
C
P
D
0.329
W
Pulsed Drain Current
t
p
= 10
m
s
I
DM
-4.0
A
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Source Current (Body Diode), Continuous
I
S
-0.5
A
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
Junction-to-Ambient Steady State (Note 1)
R
JA
380
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S
G
D
Device
Package
Shipping
ORDERING INFORMATION
NTS4101PT1
SOT-323
3000/Tape & Reel
P-Channel MOSFET
SC-70/SOT-323
CASE 419
STYLE 8
TTW
TT = Device Code
W = Work Week
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
-20 V
83 m
W
@ -4.5 V
88 m
W
@ -3.6 V
104 m
W
@ -2.5 V
-1.37 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS4101PT1G
SOT-323
(Pb-Free)
3000/Tape & Reel
NTS4101P
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2
ELECTRICAL CHARACTERISTICS
(T
J
=25
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250
m
A
-20
-24.5
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
-13.7
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
16 V
T
J
= 25
C
-1.0
m
A
V
DS
= -16
V
T
J
= 70
C
-5.0
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
m
A
-0.45
-0.64
-1.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.7
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= -4.5
V, I
D
= -1.0
A
83
120
m
(
)
V
GS
= -3.6
V, I
D
= -0.7
A
88
130
V
GS
= -2.5
V, I
D
= -0.3
A
104
160
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
20 V
603
840
pF
Output Capacitance
C
OSS
V
DS
= -20 V
90
125
Reverse Transfer Capacitance
C
RSS
62
85
Total Gate Charge
Q
G(TOT)
V
GS
= -4.5 V, V
DS
= -4.5
V,
I
1 0 A
6.4
9.0
nC
Threshold Gate Charge
Q
G(TH)
I
D
= -1.0
A
0.7
Gate-to-Source Charge
Q
GS
1.0
Gate-to-Drain Charge
Q
GD
1.5
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t
d(ON)
V
GS
= -4.5
V, V
DD
= -4.0
V,
I
1 0 A R
6 2
6.2
12
ns
Rise Time
t
r
I
D
= -1.0
A, R
G
= 6.2
14.9
25
Turn-Off Delay Time
t
d(OFF)
26
40
Fall Time
t
f
18
30
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
0 3 A
T
J
= 25
C
-0.61
-1.2
V
I
S
= -0.3
A
T
J
= 125
C
-0.5
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/
m
s,
I
1 0 A
10.9
20
ns
Charge Time
T
a
I
S
= -1.0
A
7.1
Discharge Time
T
b
3.8
Reverse Recovery Charge
Q
RR
4.25
nC
2. Pulse Test: pulse width
300
m
s, duty cycle
2%.
3. Switching characteristics are independent of operating junction temperatures.
NTS4101P
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3
TYPICAL CHARACTERISTICS
0
1
2
3
4
0
2
4
6
8
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5 V
-3.0 V
-2.2 V
-2.0 V
-1.8 V
-1.6 V
-1.4 V
-1.0 V
-3.5 V
-1.2 V
T
J
= 25
C
Figure 1. On-Region Characteristics
0
1
3
5
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
Figure 2. Transfer Characteristics
Figure 3. On-Resistance versus Drain Current
and Temperature
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE-TO-SOURCE VOLTAGE (V)
T
J
= 25
C
Figure 4. On-Resistance versus Drain Current
and Temperature
0.7
0.9
1.1
1.3
1.5
-50
-25
0
25
50
75
100
125
150
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
Figure 6. Capacitance Variation
0
1
2
3
4
5
6
0
0.4
0.8
1.2
2.4
T
J
= -55
C
T
J
= 25
C
T
J
= 125
C
V
DS
w
-10 V
I
D
= -1.0 A
V
GS
= -4.5 V
0.16
0.12
0.08
0.04
0
-I
D
, DRAIN CURRENT (A)
2
4
6
5
6
1.6
2.0
V
GS
= -4.5 V
1000
0
4
8
12
16
20
-DRAIN-TO-SOURCE VOLTAGE (V)
C, CAP
ACIT
ANCE (pF)
T
J
= 25
C
V
GS
= 0 V
C
ISS
C
OSS
C
RSS
600
400
200
0
800
T
J
= 125
C
T
J
= -55
C
0
1
3
5
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
-I
D
, DRAIN CURRENT (A)
T
J
= 25
C
0.16
0.12
0.08
0.04
0
2
4
6
V
GS
= -3.6 V
T
J
= 125
C
T
J
= -55
C
-2.5 V
NTS4101P
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4
TYPICAL CHARACTERISTICS
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Gate-to-Source and Drain-to-Source
Voltage versus Total Charge
0
0.2
0.4
Figure 8. Diode Forward Voltage versus
Current
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
-I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
0
1
2
3
4
0
4
6
V
GS
I
D
= -1.0 A
T
J
= 25
C
2
8
Q
T
-V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
3
2
1
0
0.6
1
5
Q
1
Q
2
0.8
T
J
= 25
C
T
J
= 125
C
NTS4101P
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5
PACKAGE DIMENSIONS
SC-70 (SOT-323)
CASE 419-04
ISSUE L
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
C
N
A
L
D
G
S
B
H
J
K
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.071
0.087
1.80
2.20
B
0.045
0.053
1.15
1.35
C
0.032
0.040
0.80
1.00
D
0.012
0.016
0.30
0.40
G
0.047
0.055
1.20
1.40
H
0.000
0.004
0.00
0.10
J
0.004
0.010
0.10
0.25
K
0.017 REF
0.425 REF
L
0.026 BSC
0.650 BSC
N
0.028 REF
0.700 REF
S
0.079
0.095
2.00
2.40
0.05 (0.002)
NTS4101P
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6
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NTS4101P/D
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