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Электронный компонент: P2N2222AZL1

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Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
75
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current -- Continuous
I
C
600
mAdc
Total Device Dissipation @ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10
m
Adc, I
E
= 0)
V
(BR)CBO
75
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
6.0
--
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
CEX
--
10
nAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 150
C)
I
CBO
--
--
0.01
10
Adc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
--
10
nAdc
Collector Cutoff Current
(V
CE
= 10 V)
I
CEO
--
10
nAdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
I
BEX
--
20
nAdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 1
1
Publication Order Number:
P2N2222A/D
P2N2222A
CASE 2911, STYLE 17
TO92 (TO226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= 55
C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(1)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
(1)
h
FE
35
50
75
35
100
50
40
--
--
--
--
300
--
--
--
CollectorEmitter Saturation Voltage
(1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
--
--
0.3
1.0
Vdc
BaseEmitter Saturation Voltage
(1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
--
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(2)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
--
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
--
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
--
25
pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
--
--
8.0
4.0
X 10
4
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
75
300
375
--
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
5.0
25
35
200
m
mhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
rb
C
c
--
150
ps
Noise Figure
(I
C
= 100
m
Adc, V
CE
= 10 Vdc, R
S
= 1.0 k
, f = 1.0 kHz)
N
F
--
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= 2.0 Vdc,
t
d
--
10
ns
Rise Time
(V
CC
30 Vdc, V
BE(off)
2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc) (Figure 1)
t
r
--
25
ns
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
I
15
Ad ) (Fi
2)
t
s
--
225
ns
Fall Time
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
f
--
60
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
P2N2222A
http://onsemi.com
3
Figure 1. TurnOn Time
Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100
s,
DUTY CYCLE
2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200 300
500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
= 125
C
T
J
= 25
C
25
C
-55
C
I
C
= 1.0 mA
10 mA
150 mA
500 mA
V
CE
= 1.0 V
V
CE
= 10 V
P2N2222A
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4
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME
(ns)
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
I
C
/I
B
= 10
T
J
= 25
C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
3.0
2.0
300
500
500
t, TIME
(ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
10
20
70 100
5.0 7.0
30
50
200 300 500
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25
C
t
s
= t
s
- 1/8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
1.0 2.0
5.0 10 20
50
0.2
0.5
0
100
NF
, NOISE FIGURE (dB)
0.01 0.02 0.05
R
S
= OPTIMUM
R
S
=
SOURCE
R
S
=
RESISTANCE
I
C
= 1.0 mA, R
S
= 150
500
A, R
S
= 200
100
A, R
S
= 2.0 k
50
A, R
S
= 4.0 k
f = 1.0 kHz
I
C
= 50
A
100
A
500
A
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0 5.0 7.0 10
20 30
50
0.2 0.3 0.5 0.7
C
cb
20
30
C
eb
Figure 10. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
CE
= 20 V
T
J
= 25
C
P2N2222A
http://onsemi.com
5
Figure 11. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V
,
VOL
T
AGE (VOL
TS)
0
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT
(mV/ C)
-1.0
-1.5
-2.5
R
qVC
for V
CE(sat)
R
qVB
for V
BE
0.1
1.0 2.0
5.0 10 20
50
0.2
0.5
100 200 500 1.0 k
1.0 V
-2.0
0.1
1.0 2.0
5.0 10 20
50
0.2
0.5
100 200 500
P2N2222A
http://onsemi.com
6
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
P2N2222A
http://onsemi.com
7
Notes
P2N2222A
http://onsemi.com
8
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
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P2N2222A/D
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