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Электронный компонент: T2800D

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Semiconductor Components Industries, LLC, 1999
February, 2000 Rev. 3
1
Publication Order Number:
T2800/D
T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 400 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Four Quadrant Gating
Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to +125
C, Gate Open)
VDRM,
VRRM
400
Volts
OnState RMS Current
(All Conduction Angles, TC = +80
C)
IT(RMS)
8.0
Amps
Peak NonRepetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80
C)
ITSM
100
Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power
(Pulse Width = 10
s, TC = +80
C)
PGM
16
Watts
Average Gate Power (t = 8.3 ms,
TC = +80
C)
PG(AV)
0.35
Watt
Peak Gate Current
(Pulse Width = 10
s, TC = +80
C)
IGM
4.0
Amps
Operating Junction Temperature Range
TJ
40 to
+125
C
Storage Temperature Range
Tstg
40 to
+150
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
400 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
T2800D
TO220AB
500/Box
TO220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
MT1
G
MT2
T2800D
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
2.2
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TC = 25
C
TC = 100
C
IDRM,
IRRM
--
--
--
--
10
2.0
A
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(IT =
"
30 A Peak)
VTM
--
1.7
2.0
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
--
--
--
--
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 100 Ohms)
VGT
--
1.25
2.5
Volts
Gate NonTrigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms, TC = 100
C)
VGD
0.2
--
--
Volts
Holding Current
(VD = 12 Vdc, Initiating Current =
"
200 mA, Gate Open)
IH
--
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1
s)
tgt
--
1.6
--
s
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80
C)
dv/dt(c)
--
10
--
V/
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100
C)
dv/dt
60
--
--
V/
s
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
T2800D
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT
+ IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
T2800D
http://onsemi.com
4
FULL CYCLE
SINUSOIDAL
WAVEFORM
0
2
4
100
85
90
80
TYPICAL
2
4
6
8
10
12
10
8
6
4
2
0
MAXIMUM
0
IT(RMS), RMS ON-STATE CURRENT (AMP)
6
95
12
8
FULL CYCLE
SINUSOIDAL
WAVEFORM
IT(RMS), RMS ON-STATE CURRENT (AMP)
T
C
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
P
(A
V)
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
Figure 1. Current Derating
Figure 2. Power Dissipation
T2800D
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO220AB
CASE 221A07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
T
SEATING
PLANE
S
R
J
U
T
C