Fea tures
Point source irradiance pattern
Flat lensed for wide radiation angle
Easily stackable on 0.100" (2.54 mm)
hole centers
De scrip tion
The OP268FPS contains an 850 nm
gallium aluminum arsenide infrared
emitting diode molded in an
"end-looking" miniature black package.
This device has a wide radiation angle
due to its flat emitting surface. The point
source GaAIAs IRED emits photons from
a 0.004" diameter area centered with the
optical centerline. Small size and 0.100"
(2.54 mm) lead spacing allow
considerable design flexibility.
The stable V
F
vs. Temperature
characteristic make them ideal for
applications where voltage is limited
(such as battery operation).
The low t
r
/t
f
make them ideal for high
speed operation.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Re verse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con tin u ous For ward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (2
s pulse width, 0.1% duty cy cle). . . . . . . . . . . . . . . . . . 1.0 A
Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . . . . . -40
C to +100
C
Lead Sol dering Tem per a ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec onds maximum when flow
sol der ing. Max i mum 20 grams force may be ap plied to the leads when sol der ing.
(2) De rate lin early 1.33 mW/
C above 25
C.
(3) E
e(APT)
is a mea sure ment of the av er age apertured ra di ant en ergy in ci dent upon a sens ing
area 0.081" (2.06 mm) in di am e ter, per pen dic u lar to and cen tered on the me chan i cal axis of
the "emit ting sur face" and 0.400" (10.16 mm) from the mea sure ment sur face.
E
e(APT)
is not
nec es sar ily uni form within the mea sured area.
Prod uct Bul le tin OP268FPS
No vem ber 2000
Plas tic Point Source In fra red Emitting Diode
Type OP268FPS
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
11
Type OP268FPS
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAM E TER
MIN TYP MAX
UNITS
TEST CON DI TIONS
E
e(APT)
Apertured Irradiance
.10
.90
mW/cm
2
I
F
= 20 mA
(3)
V
F
Forward Voltage
1.80
V
I
F
=
20 mA
I
R
Reverse Current
20
A
V
R
= 2 V
p
Wavelength at Peak Emission
850
nm
I
F
= 20 mA
B
Spectral Bandwidth Between Half Power
Points
50
nm
I
F
= 20 mA
HP
Emission Angle at Half Power
50
Deg.
I
F
= 20 mA
t
r
Rise Time
10
ns
I
F(PK)
= 20 mA
t
f
Fall Time
10
ns
PW = 10
s, D.C. = 10%
12
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