Fea tures
Characterized at 5mA for battery
operated systems or other low drive
current systems
Wide irradiance pattern (OP294) or
narrow irradiance pattern (OP299)
Significantly higher power output than
GaAs at equivalent drive currents
Wavelength matched to silicon's peak
response
T-1 3/4 package
De scrip tion
The OP294 and OP299 are gallium
arsenide infrared emitting diodes
designed for low current or power limited
applications (such as battery supplies).
These LEDs are similar in design to the
OP290 and OP295 but use a smaller
chip which increases output
efficiency at low current levels by
increasing current density. Light output
can be maximized with continuous (d.c.)
forward current up to 100mA or with
pulsed forward current operation up to
750 mA. The chip is mounted in an IR
transmissive plastic package and has
been designed and tested for use with
OP593/598 phototransistors or similar
photodetector.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Con tinu ous For ward Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak For ward Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.80 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and 1.429" (36.3 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(4) E
e(APT)
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and .500" (12.7 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(5) Cathode lead is 0.070" nominal shorter than anode lead.
Prod uct Bul le tin OP294
June 1996
GaA lAs Plas tic In fra red Emit ting Di ode
Types OP294, OP299
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
2-56
Types OP294, OP299
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX UNITS
TEST CON DI TIONS
E
e(APT)
Apertured Radiant Incidence
OP294
OP299
0.50
0.15
1.50
0.45
mW/cm
2
mW/cm
2
I
F
= 5 mA
(4)
I
F
= 5 mA
(3)
V
F
Forward Voltage
1.50
V
I
F
= 5 mA
I
R
Reverse Current
10
A
V
R
= 2 V
p
Wavelength at Peak Emission
890
nm
I
F
= 10 mA
B
Spectral Bandwidth Between Half Power Points
80
nm
I
F
= 10 mA
p/
T
Spectral Shift with Temperature
+0.18
nm/
o
C I
F
= Constant
HP
Emission Angle at Half Power Points
OP294
OP299
50
20
Deg.
Deg.
I
F
= 10 mA
I
F
= 10 mA
t
r
Output Rise Time
500
ns
I
F(PK)
= 100 mA,
PW = 10
s, D.C. = 10%
t
f
Output Fall Time
250
ns
2-57
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