Fea tures
Wide receiving angle
Variety of sensitivity ranges
Side-looking package for space limited
applications
Base-emitter resistor provides ambient
light protection
De scrip tion
The OP755 device consists of a NPN
silicon phototransistor molded in blue
tinted epoxy packages. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy PC
board mounting of slotted optical
switches or optical interrupt detectors.
The series is mechanically and spectrally
matched to the OP140 and OP240 series
of infrared emitting diodes.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Cur rent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
C to +100
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
ұ-
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. When flow sol der ing.
Max. 20 grams force may be ap plied to leads when sol der ing.
(2) Derate linearly 2.0 mW/
C above 25
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
A.
Typi cal Per form ance Curves
Prod uct Bul le tin OP755
June 1999
NPN Pho to tran sis tor with Base- Emitter Resistor
Types OP755A, OP755B, OP755C, OP755D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
̧ Ͱ λ--
ɿ
9
Sche matic
Types OP755A, OP755B, OP755C, OP755D
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX UNITS
TEST CON DI TIONS
I
C(ON)
On-State Collector Current
OP755A
OP755B
OP755C
OP755D
1.80
1.20
0.70
0.70
5.50
3.40
2.25
5.50
mA
V
CE
= 5 V, E
e
= 1.0 mW/cm
2(3)
E
KP
Knee Point Irradiance
.2
mW/cm
2
V
CE
= 5 V
(4)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 10 V, E
e
= 0
I
ECO
Emitter-Reverse Current
100
A
V
(BR)CEO
Collector-Emitter Breakdown
30
V
I
C
= 100
A
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
I
C
= 100
A, E
e
= 1 mW/cm
2(3)
Typi cal Per form ance Curves
10
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V
RL
= 1 V
V
CE
= 5 V
50% Duty Cycle
LED:
= 935 nm
ٿ-
- --
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