Fea tures
Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
De scrip tion
The OP770 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a clear epoxy package. The
internal collector-emitter capacitor allows
the device to be used in applications
where external high frequency emissions
could compromise signal integrity.
The device's wide receiving angle
provides relatively even reception over a
large area.
The OP770 is 100% production tested
using an infrared light source for close
correlation with Optek's GaAs and
GaAIAs emitters.
Side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
C to +100
C
Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
C above 25
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lense surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in
A, use the formula I
CED
= 10
(0.040T
A
-3.4)
when
T
A
is ambient temperature in
C.
Typi cal Per form ance Curves
Prod uct Bul le tin OP770A
Feb ru ary 2000
NPN Pho to tran sis tor with Collector- Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typical Spectral Response
Wavelength - nm
Sche matic
Types OP770A, OP770B, OP770C, OP770D
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX UNITS
TEST CON DI TIONS
I
C(ON)
On-State Collector Current
OP770D
OP770C
OP770B
OP770A
0.85
0.85
1.50
2.25
7.00
2.80
4.20
7.00
mA
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2(3)
I
C
/
T
Relative IC Changes with Temperature
100
%/
C
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2
,
= 935 nm
I
CEO
Collector Dark Current
100
nA
V
CE
= 10.0 V, E
e
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5.0
V
I
E
= 100
A
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 100
A, E
e
= 1.0 mW/cm
2(3)
C
CE
Capacitance
1000
pF
V
R
= 0
Typi cal Per form ance Curves
R
L
- Load Resistance - K
160
140
120
100
80
60
40
20
0
0
2
OP770
4
6
8
10
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1 mS
LED = GaAIAs, = 890
nm
OP550
Typical Rise and Fall Time
vs. Load Resistance
Normalized Output
vs. Frequency
Frequency - KHz
OP770
VRL = 1 V
VCE = 5 V
50% Duty Cycle
RL = 10 K
OP550
1.00
.75
.50
.25
0.0
1
10
100
1000
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