Fea tures
High reliability screening patterned
after MIL-PRF-19500
Each lot subjected to Group A & B Lot
Acceptance
Lensed for high sensitivity
Mechanically and spectrally matched
to the OP235TX/TXV and
OP236TX/TXV series IREDs
De scrip tion
Each device in the OP803, OP804 and
OP805TX/TXV series consists of a high
reliability NPN phototransistor mounted in
a lensed, hermetically sealed, TO-18
package. All devices are 100% screened
per Table II of MIL-PRF-19500. Typical
screening and lot acceptance tests are
provided on page 13-4.
The OP803, OP804 and OP805 TX/TXV
series lensing creates an acceptance half
angle of 12
o< D>
measured from the optical
axis to the half power point. The series
can be matched with either a solid state
infrared source, such as the OP235 and
OP236 TX/TXV series IREDs, or can be
used to sense infrared content in a visible
light source, such as a tungsten bulb or
sunlight for automatic brightness control.
Ab so lute Max i mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Stor age Tem per a ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Op er ating Tem per a ture Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Lead Sol dering Tem per a ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(1)
Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Col lec tor-Base Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter-Base Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dis si pa tion. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 2.5 mW/
o
C above 25
o
C.
Prod uct Bul le tin OP803TX
Sep tem ber 1996
Hi-Reliability NPN Sil i con Phototransistor
Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV
Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
13-34
@TOPICS =
Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV
Optek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Optek Tech nol ogy, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
Sym bol
Pa ram e ter
Min Typ Max
Units
Test Con di tions
I
C(on)
On-State Collector Current
OP803TX,TXV
OP804TX,TXV
OP805TX,TXV
4.0
7.0
15.0
8.0
22.0
mA
mA
mA
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
V
CE
= 5.0 V, E
e
= 5.0 mW/cm
2(3)
I
CEO
Collector-Emitter Dark Current
100
100
nA
A
V
CE
= 10.0 V, E
e
= 0
V
CE
= 10.0 V, E
e
= 0, T
A
= 100
o
C
V
(BR)CBO
Collector-Base Breakdown Voltage
30
V
I
C
= 100
A, I
E
= 0, E
e
= 0
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 100
A, I
B
= 0, E
e
= 0
V
(BR)EBO
Emitter-Base Breakdown Voltage
5.0
V
I
E
= 100
A, I
C
= 0, E
e
= 0
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 0.4 mA, E
e
= 5.0 mW/cm
2(3)
t
r
Rise TimeOP804TX,TXV
OP805TX,TXV
10.0
15.0
s
V
CC
= 30 V, I
C
= 1.00 mA,
R
L
= 100
t
f
Fall TimeOP804TX,TXV
OP805TX,TXV
10.0
15.0
s
(3) Light source is an un fil tered tung sten lamp op er ated at a tem per a ture of 2870 K.
13-35
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