Fea tures
Non-contact switching
Apertured for high resolution
Hermetically sealed components
Components processed to Optek's
screening program patterned after
MIL-PRF-19500 for TX and TXV
devices
De scrip tion
The OPB847TX, OPB847TXV,
OPB848TX, and OPB848TXV each
consist of a gallium aluminum arsenide
LED and a silicon phototransistor
soldered into a printed circuit board then
mounted in a high temperature plastic
housing on opposite sides of a 0.100
inch (2.54 mm) wide slot.
Phototransistor switching takes place
whenever an opaque object passes
through the slot. Both device types have
a 0.025 inch (0.635 mm) by 0.06 (1.52
mm) aperture in front of the
phototransistor for high resolution
positioning sensing.
The OPB847TX, OPB847TXV,
OPB848TX, and OPB848TXV use
optoelectronic components that have
been processed and tested as either TX
or TXV components per MIL-PRF-19500.
Typical screening and lot acceptance
tests are provided on page 13-4.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +125
o
C
Stor age Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
In put Di ode
For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Out put Pho to tran sis tor
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 1.00 mW/
o
C above 25
o
C.
(3) Methanol and isopropanol are recommended as cleaning agents.
Prod uct Bul le tin OPB847TX/TXV
Sep tem ber 1996
Hi- Rel Slot ted Op ti cal Switches
Types OPB847TX, OPB847TXV, OPB848TX, OPB848TXV
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
13-40
Types OPB847TX, OPB847TXV, OPB848TX, OPB848TXV
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
Sym bol
Pa rame ter
Min
Typ
Max Units
Test Con di tions
In put Di ode
V
F
Forward Voltage
(4)
1.00
1.35
1.70
V
I
F
= 20.0 mA
1.20
1.55
1.90
V
I
F
= 20.0 mA, T
A
= -55
o
C
0.80
1.20
1.60
V
I
F
= 20.0 mA, T
A
= 100
o
C
I
R
Reverse Current
0.1
100
A
V
R
= 2.0 V
Out put Pho to tran sis tor
V
(BR)CEO
Collector-Emitter Breakdown Voltage
50
110
V
I
C
= 1.0 mA, I
F
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage
7.0
10.0
V
I
E
= 100
A, I
F
= 0
I
C(off)
Collector-Emitter Dark Current
0.2
100
nA
V
CE
= 10.0 V, I
F
= 0
10
100
A
V
CE
= 10.0 V, I
F
= 0, T
A
= 100
o
C
Cou pled
I
C(on)
On-State Collector Current
(4)
OPB847
4.0
mA
V
CE
= 10.0 V, I
F
= 20.0 mA
OPB847
2.5
mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= -55
o
C
OPB847
2.5
mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= 100
o
C
OPB848
1.0
mA
V
CE
= 10.0 V, I
F
= 20.0 mA
OPB848
0.6
mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= -55
o
C
OPB848
0.6
mA
V
CE
= 10.0 V, I
F
= 20.0 mA, T
A
= 100
o
C
V
CE(SAT)
Collector-Emitter Saturation
Voltage
OPB847
0.20
0.30
V
I
C
= 2.0
mA, I
F
= 20.0 mA
OPB848
0.20
0.30
V
I
C
= 500
A, I
F
= 20.0 mA
t
r
Output Rise Time
OPB847
12.0
20.0
s
V
CC
= 10.0 V, I
F
= 20.0 mA,
R
L
= 1,000
OPB848
8.0
15.0
s
t
f
Output Fall Time
OPB847
12.0
20.0
s
OPB848
8.0
15.0
s
(4) Meas ure ment is taken dur ing the last 500
s of a sin gle 1.0 ms test pulse. Heat ing due to in creased pulse rate or pulse width can cause
change in meas ure ment re sults.
13-41
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