HIGH-POWER GaAlAs EMITTER CHIPS
OD-24X24-C
FEATURES
High current capability
2 bond pads for uniform output
Gold contacts for high reliability bonding
High reliability LPE GaAlAs IRLED chips
All dimensions are nominal values in inches unless
otherwise specified.
.024
.024
N
P
.005
.003
GOLD
CONTACTS
EMITTING
SURFACE
.006
.005
.005
.006
.006 D
2 PLACES
Total Power Output, P
o
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
I
F
= 100mA
I
F
= 200mA
I
R
= 10
A
V
R
= 0V
7
5
10
880
80
1.6
30
60
0.7
0.7
2
mW
nm
nm
Volts
Volts
pF
sec
sec
ELECTRO-OPTICAL CHARACTERISTICS AT 25
C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
F
= 50mA
Power Dissipation
Continuous Forward Current
Peak Forward Current (10
s, 300 Hz)
Reverse Voltage
Storage and Operating Temperature Range
Maximum Junction Temperature
400mW
200mA
7A
5V
-65
C to 150C
150
C
ABSOLUTE MAXIMUM RATINGS AT 25
C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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