HI-REL GaAlAs IR EMITTERS
OD-50J
Power Dissipation
1
Continuous Forward Current
Peak Forward Current (10
s, 700Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
900mW
450mA
12A
5V
240
C
ABSOLUTE MAXIMUM RATINGS AT 25
C CASE
1Derate per Thermal Derating Curve above 25C
2Derate linearly above 25C
FEATURES
High reliability LPE GaAlAs IRLEDs
High power output
880nm peak emission
Four wire bonds on chip corners
Hermetically sealed stud package
MIL-S-19500 screening available
No internal coatings
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
Total Power Output, P
o
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
I
F
= 300mA
I
F
= 50mA
I
F
= 300mA
I
R
= 10
A
V
R
= 0V
20
5
25
880
80
115
1.5
40
90
0.7
0.7
1.8
mW
nm
nm
Deg
Volts
Volts
pF
sec
sec
ELECTRO-OPTICAL CHARACTERISTICS AT 25
C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
-65
C TO 150C
150
C
120
C/W Typical
35
C/W Typical
THERMAL PARAMETERS
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25C
.324
.332
.246
.254
.138 .225
.235
.410
.440
.013
.095
.125
.130
.150
6-32
R .100
.265
.295
.285
.315
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
Page 1 of 2
HI-REL GaAlAs IR EMITTERS
OD-50J
DEGRADATION CURVE
SPECTRAL OUTPUT
POWER OUTPUT vs TEMPERATURE
POWER OUTPUT vs FORWARD CURRENT
R
E
L
A
T
I
V
E
P
O
W
E
R
O
U
T
P
U
T
AMBIENT TEMPERATURE (
C)
50
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
0
25
50
75
100
THERMAL DERATING CURVE
M
A
X
I
M
U
M
R
A
T
I
N
G
S
T
Y
P
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
MAXIMUM PEAK PULSE CURRENT
RADIATION PATTERN
FORWARD I-V CHARACTERISTICS
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
I
F
(
a
m
p
s
)
FORWARD VOLTAGE, V
F
(volts)
0
4
3
2
1
0
1
2
3
4
5
6
DUTY CYCLE, D (%)
0.01
0.1
1
10
100
P
E
A
K
F
O
R
W
A
R
D
C
U
R
R
E
N
T
,
I p
(
a
m
p
s
)
1
0.1
100
10
t
T
Ip
D = t
T
t = 10
s
t = 50
s
t = 100
s
R
E
L
A
T
I
V
E
P
O
W
E
R
O
U
T
P
U
T
(
%
)
WAVELENGTH,
(nm)
750
100
800
850
900
950
1,000
80
60
40
20
0
AMBIENT TEMPERATURE (
C)
25
125
150
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
900
400
300
200
100
0
1000
800
700
600
500
50
100
75
NO
HEAT SINK
INFINITE
HEAT SINK
R
E
L
A
T
I
V
E
P
O
W
E
R
O
U
T
P
U
T
(
%
)
STRESS TIME, (hrs)
10
1
100
90
80
70
60
50
10
2
10
3
10
4
10
5
NO PRE BURN-IN PERFORMED
I
F
= 200mA
T
CASE
= 36
C
I
F
= 450mA
T
CASE
= 42
C
R
E
L
A
T
I
V
E
P
O
W
E
R
O
U
T
P
U
T
(
%
)
BEAM ANGLE,
(deg)
100
100
80
60
40
20
0
80
60
40
20
0
20
40
60
80
100
P
O
W
E
R
O
U
T
P
U
T
,
P
o
(
m
W
)
FORWARD CURRENT, I
F
(mA)
10
1,000
100
10
1
100
1,000
10,000
DC
PULSE
10
s, 100Hz
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
Page 2 of 2
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