OL 8110
Dual Emitter Phototransistor
OPTOLAB Microsystems GmbH, Haarbergstr. 61, 99097 Erfurt / Germany, Tel.: ++49-361-422 906-0, Fax ++49-361-422 906 50
We reserve the right to make technical changes at any time without prior notice.
More detailed technical information can be supplied upon request.
Mechanical Specifications
Chip size: 508m x 690 m ( +/- 20 m)
Chip thickness: 178 m - 254
Active area: 200 m x 400
Back
side
(collector)
gol metalized
for conductive epoxy die-attach
Electrical Specifications
(T
A
= 25C)
Parameters
100%
tested
at
waferprobe
Parameter
Units
Min
Typ
Max
I
CE0
@ 52.0 V
A
0.1
100.0
I
DARK
@ 32.0 V
nA
1.0
100.0
I
EC0
@ 7.7 V
A
0.1
100.0
V
CE
st (I
C
= 2 mA, I
B
= 22.2 A)
mV
290.0
400.0
H
FE
(I
C
= 2 mA, V
CE
= 5.0 V)
500.0
750.0
1000.0
Additional Parameters tested for qualification and on a lot sample basis
Rise time: 10.0 s (V
CC
= 5.0 V, R
L
= 1.2 k
, C
L
= 8.0 pF, V
E
(peak) = 1.0 V)
Fall
time:
13.0
s
(V
CC
= 5.0 V, R
L
= 1.2 k
, C
L
= 8.0 pF, V
E
(peak) = 1.0 V)
Responsitivity
peak
wavelength: 88
nm
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