KOM 2125
KOM 2125 FA
2fach-Silizium-PIN Fotodiode in SMT
2-Chip Silicon PIN Photodiode in SMT
KOM 2125
KOM 2125 FA
2001-02-21
1
Wesentliche Merkmale
Speziell geeignet fr Anwendungen im Bereich
von 400 nm bis 1100 nm und bei 880 nm
(KOM 2125 FA)
Kurze Schaltzeit (typ. 25 ns)
geeignet fr Vapor-Phase Lten und
IR-Reflow-Lten
SMT-fhig
Anwendungen
Nachlaufsteuerungen
Kantenfhrung
Industrieelektronik
,,Messen/Steuern/Regeln"
Typ
Type
Bestellnummer
Ordering Code
KOM 2125
Q62702-K0047
KOM 2125 FA
Q62702-P5313
Features
Especially suitable for applications from
400 nm to 1100 nm and of 880 nm
(KOM 2125 FA)
Short switching time (typ. 25 ns)
Suitable for vapor-phase and IR-reflow
soldering
Suitable for SMT
Applications
Follow-up controls
Edge drives
Industrial electronics
For control and drive circuits
2001-02-21
2
KOM 2125, KOM 2125 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40
...
+ 80
C
Sperrspannung
Reverse voltage
V
R
60
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C)
Characteristics (
T
A
= 25
C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
KOM 2125
KOM 2125 FA
Fotostrom
Photocurrent
V
R
= 5 V, Normlicht/standard light A
T
= 2856 K,
E
v
= 1000 Ix
V
R
= 5 V
,
= 870 nm
,E
e
= 1mW/cm
2
Diode A
Diode B
Diode A
Diode B
I
P
I
P
40 (
>
30)
100 (>
75)
26 (> 20)
70 (> 50)
A
A
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
850
900
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
400
...
1100
750 ... 1100
nm
Bestrahlungsempfindliche Flche
Diode A
Radiant sensitive area
Diode B
A
4
10
4
10
mm
2
Abmessung der
bestrahlungsempfindlichen Flche
Dimensions of radiant sensitive area
Diode A
Diode B
L
B
L
W
2
2
2
5
2
2
2
5
mm
mm
mm
mm
Abstand Chipoberflche zu Verguoberflche
Distance chip front to case seal
H
0.3
0.3
mm
Halbwinkel
Half angle
60
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Diode A
Dark current
Diode B
I
R
5 (
30)
10 (
30)
5 (
30)
10 (
30)
nA
KOM 2125, KOM 2125 FA
2001-02-21
3
Leerlaufspannung
Open-circuit voltage
E
v
= 1000 Ix, Normlicht/standard light A
E
e
= 1 mW/cm
2
,
= 850 nm
V
O
V
O
350 (
>
300)
350 (
>
300)
mV
mV
Kurzschlussstrom
Short-circuit current
Normlicht/standard light A
T
= 2856 K,
E
v
= 1000 Ix
= 870 nm
, E
e
= 1 mW/cm
2
Diode A
Diode B
Diode A
Diode B
I
SC
I
SC
38
95
24
66
A
A
Anstiegszeit/Abfallzeit
Diode A
Rise and fall time
Diode B
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
P
= 800
A
t
r
,
t
f
18
25
18
25
ns
Durchlassspannung,
I
F
= 100 mA;
E
= 0
Forward voltage
V
F
1.0
1.0
V
Kapazitt
Diode A
Capacitance
Diode B
V
R
= 0 V;
f
= 1 MHz;
E
= 0
C
0
40
100
40
100
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
2.6
mV/K
Temperaturkoeffizient von
I
P
Temperature coefficient of
I
P
Normlicht/standard light A
= 850 nm
TC
I
0.18
0.2
%/K
Rauschquivalente
Strahlungsleistung
Diode A
Noise equivalent power
Diode B
V
R
= 10 V
NEP
6.4
10
14
9.1
10
14
6.4
10
14
9.1
10
14
Nachweisgrenze,
V
R
= 10 V
Diode A
Detection limit
Diode B
D*
3.1
10
12
3.5
10
12
3.1
10
12
3.5
10
12
Kennwerte (
T
A
= 25
C)
Characteristics (
T
A
= 25
C) (cont'd)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
KOM 2125
KOM 2125 FA
W
Hz
------------
cm
Hz
W
--------------------------
KOM 2125, KOM 2125 FA
2001-02-21
4
Relative Spectral Sensitivity
KOM 2125,
S
rel
=
f
(
)
Dark Current,
I
R
=
f
(
V
R
)
,
E
= 0
normalized to 10 V/25
C
Directional Characteristics
S
rel
=
f
(
)
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Relative Spectral Sensitivity
KOM 2125 FA,
S
rel
=
f
(
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
OHF01430
400
rel
S
0
600
800
1000 nm 1200
10
20
30
40
50
60
70
80
%
100
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
v
)
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V
,
E
= 0, normalized to
T
A
= 25
C
Total Power Dissipation
P
tot
=
f
(
T
A
)
KOM 2125, KOM 2125 FA
2001-02-21
5
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
1.4 (0.055)
0.2 (0.008)
4.5 (0.177)
4.3 (0.169)
8.5 (0.335)
8.2 (0.323)
0.9 (0.035)
0.7 (0.028)
GEOY6860
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
0...0.1 (0...0.004)
5.2 (0.205)
5.0 (0.197)
2
3
1
A
B
Photosensitive area
B = 5 (0.197) x 2 (0.079)
A = 2 (0.079) x 2 (0.079)
Cathode
Active area
Chip position
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