1
Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
High collector to base voltage V
CBO
q
Full-pack package which can be installed to the heat sink with
one screw.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
400
400
7
1.2
0.6
25
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 300mA
I
C
= 300mA, I
B
= 60mA
I
C
= 300mA, I
B
= 60mA
V
CE
= 10V, I
C
= 100mA, f = 1MHz
I
C
= 300mA,
I
B1
= 60mA, I
B2
= 60mA,
V
CC
= 100V
min
400
30
10
typ
15
max
100
100
160
1.0
1.2
1.0
3.5
1.0
Unit
A
A
V
V
V
MHz
s
s
s
*
h
FE1
Rank classification
Rank
Q
P
O
h
FE1
30 to 60
50 to 100
80 to 160
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
T
C
=25
C
Ta=25
C
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SA1499
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
25
35
20
5
15
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=2.0W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
8
2
6
4
7
1
5
3
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
T
C
=25C
I
B
=40mA
8mA
6mA
4mA
2mA
1mA
10mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=5
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=5
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.001
0.01
0.1
1
0.003
0.03
0.3
1
3
10
30
100
300
1000
3000
10000
V
CE
=5V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.001
0.01
0.1
1
0.003
0.03
0.3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
0
1.0
0.8
0.2
0.6
0.4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
f
t
on
t
stg
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5(I
B1
=I
B2
)
V
CC
=100V
T
C
=25C
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Non repetitive pulse
T
C
=25C
10ms
t=1ms
1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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