1
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
s
Features
q
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
q
High transition frequency f
T
q
Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
150
180
150
180
5
1.5
1
15
2.0
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SA1535
2SA1535A
2SA1535
2SA1535A
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 150V, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C
= 100
A, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 50mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
180
5
90
50
typ
160
100
0.5
1.0
200
30
max
10
220
2.0
2.0
50
Unit
A
V
V
V
V
MHz
pF
2SA1535
2SA1535
2SA1535A
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 to 155
130 to 220
2
Power Transistors
2SA1535, 2SA1535A
P
C
-- Ta
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
32
24
8
20
28
16
4
12
Without heat sink
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
T
C
=25C
25C
100C
I
C
/I
B
=10
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
1
3
10
30
100
300
1000
V
CE
=10V
T
C
=25C
25C
100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.03
0.1
0.3
1
0
400
300
100
200
V
CB
=10V
f=10MHz
T
C
=25C
Emitter current I
E
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
100
80
60
40
20
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
T
C
=25C
10ms
t=1ms
t=<50
s
2SA1535A
2SA1535
I
CP
I
C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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